2N7052 ,NPN Darlington Transistorapplications requiring extremely highgain at collector currents to 1.0 A and high breakdown voltage ..
2N7052 ,NPN Darlington Transistorapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
2N7053 ,NPN Darlington Transistorapplications requiring extremely highgain at collector currents to 1.0 A and high breakdown voltage ..
2N706 ,NPN high speed logic switch.FAIRCHILD SEMICONDUCTOR ELI PEIBHEHE'?” DDE'éI-IBE Cl I
3469674 FAIRCHILD SEMICONDUCTOR 840 2748 ..
2N709 ,Conductor Products, Inc. - N-P-N EPITAXIAL PLANAR SILICON TRANSSTOR
2N709 ,Conductor Products, Inc. - N-P-N EPITAXIAL PLANAR SILICON TRANSSTOR
2SC3355 , NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
2SC3355L-T92-K , HIGH FREQUENCY LOW NOISE AMPLIFIER
2SC3356-T1B ,For amplify low noise and high frequencyDATA SHEETDATA SHEETSILICON TRANSISTOR2SC3356MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC3356-T1B-A , NPN Silicon RF Transistor
2SC3356-T1B-A , NPN Silicon RF Transistor
2SC3356-T2B ,For amplify low noise and high frequencyDATA SHEETDATA SHEETSILICON TRANSISTOR2SC3356MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2N7052
NPN Darlington Transistor
2N7052 / 2N7053 / NZT7053 Discrete POWER & Signal Technologies 2N7052 2N7053 NZT7053 C E C TO-92 C B B TO-226 C E SOT-223 B E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 100 V CEO V Collector-Base Voltage 100 V CBO V Emitter-Base Voltage 12 V EBO I Collector Current - Continuous 1.5 A C Operating and Storage Junction Temperature Range -55 to +150 C T , T ° J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N7052 2N7053 *NZT7053 P Total Device Dissipation 625 1,000 1,000 mW D 5.0 8.0 8.0 Derate above 25°C mW/°C R Thermal Resistance, Junction to Case 83.3 125 °C/W θJC Thermal Resistance, Junction to Ambient 200 50 125 R °C/W θJA 2 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . ã 1997
