2N7051 ,NPN Darlington Transistor2N70512N7051NPN Darlington Transistor• This device designed for
2N7051 ,NPN Darlington Transistorapplications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage ..
2N7052 ,NPN Darlington Transistorapplications requiring extremely highgain at collector currents to 1.0 A and high breakdown voltage ..
2N7052 ,NPN Darlington Transistorapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
2N7053 ,NPN Darlington Transistorapplications requiring extremely highgain at collector currents to 1.0 A and high breakdown voltage ..
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3469674 FAIRCHILD SEMICONDUCTOR 840 2748 ..
2SC3355 , NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
2SC3355 , NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
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2SC3356-T1B ,For amplify low noise and high frequencyDATA SHEETDATA SHEETSILICON TRANSISTOR2SC3356MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC3356-T1B-A , NPN Silicon RF Transistor
2N7051
NPN Darlington Transistor
2N7051 2N7051 NPN Darlington Transistor • This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from Process 06. • See 2N7052 for Characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* T =25°C unless otherwise noted A Symbol Parameter Ratings Units V Collector-Emitter Voltage 100 V CEO V Collector-Base Voltage 100 V CBO V Emitter-Base Voltage 12 V EBO I Collector Current 1.5 A C T , T Storage Temperature -55 ~ 150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These rtings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BV Collector-Emitter Breakdown Voltage * I = 1.0mA, I = 0 100 V CEO C B BV Collector-Base Breakdown Voltage I = 100μA, I = 0 100 V CBO C B BV Emitter-Base Breakdown Voltage I = 1.0mA, I = 0 12 V EBO E C I Collector Cut-off Current V = 80V, I = 0 0.1 μA CBO CB E I V = 80V, I = 0 0.2 μA CES CE E I Emitter Cut-off Current V = 7.0V, I = 0 0.1 μA EBO EB C On Characteristics * h DC Current Gain V = 5.0V, I = 100mA 10,000 FE CE C V = 5.0V, I = 1.0A 1,000 20,000 CE C V (sat) Collector-Emitter Saturation Voltage I = 100mA, I = 0.1mA 1.5 V CE C B V (sat) Base-Emitter Saturation Voltage I = 100mA, V =5.0V 2.0 V BE C BE Small Signal Characteristics f Transition Frequency I = 100mA, V =5.0V 200 MHz T C CE h Small Signal Current Gain V =5.0V, I = 100mA, 10 100 fe CE C f = 20MHz * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.0% ©2002 Rev. A1, August 2002
