2N7013 ,N-Channel Enhancement Mode TransistorsIrli,tliggptias e 2N7012, 2N7013N-Channel Enhancement Mode Transistors"T'": 30) ~054-PIN DIP(Simila ..
2N7013 ,N-Channel Enhancement Mode TransistorsABSOLUTE MAXIMUM RATINGS (TA tr."., 25°C Unless Otherwise Noted)PARAMETERSITEST CONDITIONS SYMBOLDr ..
2N7051 ,NPN Darlington Transistor2N70512N7051NPN Darlington Transistor• This device designed for
2N7051 ,NPN Darlington Transistorapplications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage ..
2N7052 ,NPN Darlington Transistorapplications requiring extremely highgain at collector currents to 1.0 A and high breakdown voltage ..
2N7052 ,NPN Darlington Transistorapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
2SC3352A ,Power TransistorAbsolute Maximum Ratings (Tc=25°C) . 3 "ll“ 15max0'5m“__—._—.— '5Item Symbol Value Unit 5, E 7- h 0 ..
2SC3354 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca+0.20Parameter Symbol Rating Unit0.45–0.10+0.200.45–0.10(2.5) (2 ..
2SC3355 , NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
2SC3355 , NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
2SC3355 , NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
2SC3355L-T92-K , HIGH FREQUENCY LOW NOISE AMPLIFIER
2N7013
N-Channel Enhancement Mode Transistors
2N7012, 2N7013
N-Channel Enhancement Mode Transistors
"TZ. Ac) ~05
GTf,i,t,1iggpt'ig,
Incorporated '
PRODUCT SUMMARY
PART V l
NUMBER "'l8" mag") Ji
2N7012 60 0.35 1.2
2N7013 40 0.35 1.2
ABSOLUTE MAXIMUM RATINGS (TA IT.". 25°C Unless Otherwise Noted)
4-PIN DIP
(Similar to TO-250)
TOP VIEW
1 T . 1]
2 ir 3
2 SOURCE
3 DRAIN
LIMITS
PARAMETERS/TEST CONDITIONS SYMBOL 2N7012 2N7013 UNITS
Draln-Source Voltage 1hss 60 40 V
(3attr-8outtttt Voltage Vas t20 :20
Continuous Drain Current TA = 25°C ID 1.2 1.2
TA = 100°C 0.80 0.80 A
Pulsed Drain Current1 kw 10 10
Power Dissipation TA = 25°C PD 1.0 1.0 W
TA = 100°C 0.4 0.4
Operating Junclion & Storage Temperature Range To, Tstg -55 to 150 ''0
Lead Temperature Ms'' from case for 10 sec.) TL 300
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient Hum 120 W
'tuse width limited by maximum Junction temperature.
2N7012, 2N7013 ' . JiTif,i,iil,iig.g,ig,
Incorporated
ELECTRICAL CHARACTERISTICS tr, J = tttPC Unless Otherwise Noted) Tr 3cl - os,
LIMITS
PARAMETER SYMBOL TEST CONDITIONS TYP MIN I MAX UNIT
STATIC
tttit"''"""'"''" 203:: 0...... Ves=°v-'o-w 'll v
Gate Threshold Voltage Vasm) Ws ' V08. k, = moo M 2.0 4.0
GateBody Leakage kiss hss = 0V,Vas = t20V :100 nA
Zen) Gale Voltage Drain Current loss Vas " vmuss. Vas = 0 v 250 PA
Vos " o.axv(amoss.vcs = mm = 125°C 1000
On-Stata DraIn Qummtt 'D(0N) Vos = 2 V. Vas = to V 1.2 A
DraWSouttyt Onstate Rasislance‘ msioto Vas a lov, ID = 1.0 A 0.3 0.35 n
veg --100, = 1.0 A, Ta =125°c 0.55 0.64
Forward Transconductanca‘ g, V03 = ISV, k, = 1.0A 1.5 1.2 S
DYNAMIC
lnpm Capacitance G, . 220 300
Output Capacitance cos, Vas = ov.vos " 25V,1-=1MHz 120 200 pF
Raverse Transfer Capacitance Cas 30 100
Total Gala Charge2 % 4.8 6.0
Gatesource Charge:2 th, Vos = 0.8 otWmgsss,Vas " 10 V, In '" Iii A 1 nC
Gala-Dtaln Chargaa tke 2
mm-On Delay Time2 Mons _ 7 20
Rise Tmar2 k Von " 30v. Ri.s 25 n 13 30 ns
TuttvOlf Delay Tune! mm k, 2: 1.2 A,Vam = 10 v. Rs = 25 n 18 30
FallTlme2 ' 13 25
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TA = 25°C)
Cttnt'nuaus Current Is 1.2 A
Pulsed Currenta ISM 10
Forward 1laliagst Vso IF ' 1s,Ves = 0V 1.6 V
Reverse Recovery Tlme In b a Is. dIFIdt = lot? Alps 45 ns
Revexse Recovery Charge th, 0.6 110
‘Pulsatest Pulsandth S 300 useo. Duty Cycle 5 2%,
2Independent of operating temperature.
3Pulse width limited by maximum Junction temperature.
JiTt,itltsa,is' . _ 2N7012, 2N7013
TYPICAL CHARACTERlSTICS (25°C Unless Otherwise SpetMet0 -r 3 q (YE,
Flame t. thdputCtumettsdstiea Flam: TtgnehsrCtwaetgdstes
IV '-clltre'ie,
A vas = IO V A 4
t v , (/
E at a
iil E 2
, 5 V I'
G? ' t
o 2 4 s a 10 o 2 4 s a 10
vos - DRAltGTGStNRtXt VOLTAGEM Vas - GATE-TO-SOURCE VOLTAGE M
Figures. Whoa . Figured. tht.RttdstatttNt
To: -55°c
tl 9.; th4
g 0 vas ' 10 V
C2 E 0.3 - '"
g ii', 20 V
w 5 0,2
I I o."
o o 2 4 e a 0
ID - DRAIN OURRENHA) lg - DRAIN GURFIENHA)
Figure th Capadtarm Figure 6. Gate Charge
600 15.0
500 fl 12.5 pl)
E ti Af/
g; 400 E 10.0
E 300 g , 5 ths x V(an)nss>//
t clss Fr Q-3 tt V(amoss
' 200 c E 5.0
o m lf 1 1 2 A
100 Cm ' 2.5 lo I
o 0 IO 20 30 40 so o 0 1.5 3.0 4.5 6.0 7.5
v03 - DRAlN-TO-SOURCE VOLTAGE M o, - TOTAL GATE CHARGE (nC)
2N7012, 2N7013
JiTfiilhigg,ig
intaorptarattad
TYPICAL CHARACTERISTICS (Cont'd)
mG T. tht4tttststantta vs. Junction Ttrmperaium
T- sci-os
Figure tr; StxJrtxr.Draln mode Forward Voltage
2.otr l 20
a 1.75 a" Tg = Mt:
E v to
E A 1.50 / i
5% - " I u
ill Cl 1 25 . / 3
1: g ' / g
i n: "s-'''''' t:
O 0 _ D -
I a 1.00 o
g ",-.-"' _ '
g 0.75 . 22
0.50 1
.-50 -10 M 70 110 150 0 1 2 3 4 5
T, - JUNCTION TEMPERATURE (NO V50 - SOURCE-TO-DRAIN VOLTAGE (V)
THERMAL RATINGS
Flgure 9. Maximum thay, Current
1 25 w. Amt%ntTtsmperaiurs r t 20 Figure 10. Safe toperating Area
IO see not 1
'N. . 9
1.00 "N a 100 ps
' . - 1 ms
'i??. 0.75 _ i, 1
t g 1 ms
g 0-50 . z 100 ms
8 il! ti
a .1 = 25°C
0.25 _ l, Single pulse
_ . , _ . DC
0 - _ 0.01
0 25 50 i6 100 125 1 iO o,
TA - AMBliWrTEMPERAT11RE PC)
Vos - DRAIN- TO-SOURCE VOLTAGE M
'operation In his area may be limited by row“)
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