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2N7002VA
N-Channel Enhancement Mode Field Effect Transistor
2N7002V/VA — N-Channel Enhancement Mode Field Effect Transistor April 2010 2N7002V/VA N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Pin4) SOT-563F Marking : AB Marking : AC * Pin1 and Pin4 are exchangeable. Absolute Maximum Ratings * T = 25°C unless otherwise noted A Symbol Parameter Value Units V Drain-Source Voltage 60 V DSS V Drain-Gate Voltage R ≤ 1.0MΩ 60 V DGR GS V Gate-Source Voltage Continuous ±20 GSS V Pulsed ±40 Drain Current Continuous 280 mA I D Pulsed 1.5 A T T Junction and Storage Temperature Range -55 to +150 °C J , STG * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value Units P Total Device Dissipation 250 mW D Derating above T = 25°C 2.0 mW/°C A Thermal Resistance, Junction to Ambient * 500 °C/W R θJA * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, Minimum land pad size. © 2010 2N7002V/VA Rev. A1 1
