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2N7002P
60 V, 360 mA N-channel Trench MOSFET
Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits AEC-Q101 qualified Logic-level compatible Trench MOSFET technology Very fast switching
1.3 Applications High-speed line driver Low-side loadswitch Relay driver Switching circuits
1.4 Quick reference data[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
2N7002P
60 V, 360 mA N-channel Trench MOSFET
Rev. 02 — 29 July 2010 Product data sheet
Table 1. Quick reference dataVDS drain-source
voltage
Tamb=25°C --60 V
VGS gate-source
voltage
-20 - 20 V drain current VGS =10V; Tamb =25°C [1] --360 mA
Static characteristicsRDSon drain-source
on-state
resistance
VGS =10V; ID =500 mA; =25 °C; pulsed; tp≤ 300 µs; 0.01 1.6 Ω
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET Pinning information Ordering information Marking[1] % = -: made in Hong Kong; % = p: made in Hong Kong; % = t: made in Malaysia; % = W: made in China
Limiting values
Table 2. Pinning information G gate
SOT23 (TO-236AB) source D drain
Table 3. Ordering information2N7002P TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes2N7002P LW%
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tamb =25°C - 60 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tamb =25°C [1] - 360 mA
VGS =10V; Tamb= 100°C [1] - 280 mA
IDM peak drain current Tamb=25 °C; single pulse; tp≤10µs - 1.2 A
Ptot total power dissipation Tamb =25°C [2] - 350 mW
[1] - 420 mW
Tsp =25°C - 1140 mW junction temperature - 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb =25°C [1] - 360 mA
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Table 6. Thermal characteristicsRth(j-a) thermal resistance
from junction to
ambient
in free air [1] - 310 370 K/W
[2] - 260 300 K/W
Rth(j-sp) thermal resistance
from junction to solder
point
--115 K/W
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET Characteristics
Table 7. Characteristics
Static characteristicsV(BR)DSS drain-source
breakdown voltage =10µA; VGS =0V; Tj=25°C 60 --V
VGSth gate-source threshold
voltage =250 µA; VDS =VGS; Tj=25°C 1.1 1.75 2.4 V
IDSS drain leakage current VDS =60V; VGS =0V; Tj=25°C --1 µA
VDS =60V; VGS =0V; Tj= 150°C --10 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - - 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - - 100 nA
RDSon drain-source on-state
resistance
VGS =5V; ID=50 mA; pulsed; ≤ 300 µs; δ≤ 0.01 ; Tj =25°C
-1.3 2 Ω
VGS =10V; ID= 500 mA; pulsed; ≤ 300 µs; δ≤ 0.01 ; Tj =25°C 1.6 Ω
gfs forward
transconductance
VDS =10V; ID= 200 mA; pulsed; ≤ 300 µs; δ≤ 0.01 ; Tj =25°C 400 - mS
Dynamic characteristicsQG(tot) total gate charge ID =300 mA; VDS =30V; VGS =4.5V; =25°C
-0.6 0.8 nC
QGS gate-source charge - 0.2 - nC
QGD gate-drain charge - 0.2 - nC
Ciss input capacitance VGS =0V; VDS =10V; f=1MHz; =25°C 3050pF
Coss output capacitance - 7 - pF
Crss reverse transfer
capacitance -pF
td(on) turn-on delay time VDS =50V; RL= 250 Ω; VGS =10V;
RG(ext) =6 Ω; Tj =25°C 36ns rise time - 4 - ns
td(off) turn-off delay time - 10 20 ns fall time -5 -ns
Source-drain diodeVSD source-drain voltage IS =115 mA; VGS =0V; Tj=25°C 0.47 0.75 1.1 V
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET
