2N7002K ,N-Channel Enhancement Mode Field Effect TransistorFeatures• Low On-Resistance• Low Gate Threshold Voltage• Low Input Capacitance• Fast Switching Spee ..
2N7002K-7 , N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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2N7002-L ,Small Signal MOSFET 115 mA, 60 VoltsMAXIMUM RATINGSV R MAX I MAX(BR)DSS DS(on) DRating Symbol Value UnitDrain−Source Voltage V 60 Vdc7. ..
2N7002LT1 ,N-CHANNEL ENHANCEMENTTHERMAL CHARACTERISTICS& PIN ASSIGNMENTCharacteristic Symbol Max Unit 3DrainTotal Device Dissipatio ..
2SC3277 ,NPN Triple Diffused Planar Silicon Transistor 400V/10A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3279 ,Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier ApplicationsApplications Unit: mmMedium Power Amplifier
2SC3279-M , NPN Silicon Epitaxial Transistors
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2SC3280 , NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
2SC3280# , NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
2N7002K
N-Channel Enhancement Mode Field Effect Transistor
2N7002K — N-Channel Enhancement Mode Field Effect Transistor January 2012 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Pb Free/RoHS Compliant • ESD HBM=2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101 D S G SOT-23 Marking : 7K Absolute Maximum Ratings * T = 25°C unless otherwise noted A Symbol Parameter Value Units V Drain-Source Voltage 60 V DSS V Drain-Gate Voltage R ≤ 1.0MΩ 60 V DGR GS V Gate-Source Voltage ±20 V GSS I Drain Current Continuous 300 D mA Pulsed 800 T Operating Junction Temperature Range -55 to +150 °C J T Storage Temperature Range -55 to +150 °C STG * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value Units P Total Device Dissipation 350 mW D Derating above T = 25°C 2.8 mW/°C A R Thermal Resistance, Junction to Ambient * 350 °C/W θJA * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size © 2011 2N7002K Rev. A3 1
