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2N7002E
MOSFETS
VISHAY
2N7002E
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (mA)
60 3@VGs=10V 240
FEATURES BENEFITS
q Low On-Resistance: 3 Q q Low OffsetVoltage
0 Low Threshold: 2 V (typ) q Low-Voltage Operation
0 Low Input Capacitance: 25 pF q Easily Driven 1/)fIthout Buffer
q Fast Switching Speed: 7.5 ns q High-Speed Circuits
q Low Input and Output Leakage q Low Error Voltage
TO-236
(SOT-23)
s 2193
TopView
APPLICATIONS
q Direct Logic-Level Interface: TTL/CMOS
q Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
q Battery Operated Systems
q Solid-State Relays
Marking Code: 7Ewl
E = Part Number Code for 2N7002E
w = Week Code
I: Lot Traceability
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V05 60 V
Gate-Source Voltage VGs ci: 20
TA = 25°C 240
Continuous Drain Current (TJ = 150°C) ID
TA = 70"C 190 m A
Pulsed Drain Currenta IDM 1300
TA = 25°C 0.35
Power Dissipation PD W
TA = 70°C 0.22
Thermal Resistance, Junction-to-Ambient RthJA 357 aCIW
Operating Junction and Storage Temperature Range T J, Tsig -55 to 150 ''C
a. Pulse width limited by maximumjunction temperature.
DocumentNumber: 70860
S-04279-Rev. C, 16-Jul-01
www.vishaycom
2N7002E iiu%i,
Vishay Siliconix
SPECIFICATIONS tTo = 25°C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 pA 60 68
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 ”A 1 2 2.5
Gate-Body Leakage less VDs = 0 V, VGS = ck 15 V i 10 nA
Vros=60V,Vss=0V 1
Zero Gate Voltage Drain Current loss pA
VDs= 60 V,VGS=0V,TC= 125°C 500
V63 = 10 V, Vos = 7.5 V 800 1300
On-State Drain Currentb 'D(0n) mA
VGS = 4.5 V, Vos =10 V 500 700
VGS=10V,|D=250mA 1.2 3
Drain-Source On-Resistanceb roam) Q
VGs=4-5 V, b=200 mA 1.8 4
Forward Transconductancds gfs VDs = 15 V, ID = 200 mA 600 mS
Diode Forward Voltage VSD ls = 200 mA, VGS = 0 V 0.85 1.2 V
Dynamica
Total Gate Charge % 0.4 0.6
- VDs=10V,VGs=4.5V
Gate Source Charge Qgs In E 250 mA 006 nC
Gate-Drain Charge di (h06
Input Capacitance Ciss 21
Output Capacitance Coss Vos = 25 V, VGS = 0 V, f= 1 MHz 7 pF
Reverse Transfer Capacitance Crss 2.5
Switchinga, C
Turn-On Tlme ton VDD = 10 V, RL = 40 Q 13 20
ID CL--. 250 mA, VGEN = 10V ns
Turn-OffTIme toff Rs = 10 g 18 25
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW s300 ps duty cycle s2%.
c. Switching time is essentially independent of operating temperature.
www.vishay.com Document Number: 70860
11 -2 S-04279-Rev. C, 16-Jul-01
"Gai; 2N7002E
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Output Characteristics Transfer Characteristics
1.0 I l 1.2 l I ,,pe''''"
Vss=10,9,8,7,6V fi,'',',",',,'',',,' 5V To---55c'C /
0.8 /, / y//
A 0.9 A,
E 'ii:'] , I25 C
tD 0 6 -
b . z:
6' 4 V g / 125°C
' 7 8 0.6
é 0.4 we'"''" ‘E
0.0 0.0
O 1 2 3 4 5 0 1 2 3 4 5 6 7
I/os - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage On-Resistance vs. Drain Current
A 3 l g
' ID @ 250 mA 2
S', N. l 8
.3 2 BF
, ID @ 75 mA E"
E 1 sth'
O 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VGS - Gate-to-Source Voltage (V) ID - Drain Current (A)
On-Resistance vs. Junction Temperature Threshold Voltage Variance Over Temperature
2.0 l l l
VGS=10V@250mA // 02\
A 1.6 f 1 . 's,
E w,,,,,s1s1'''" ID = 250 “A
ID G' A
E JIs' st''"''" f: Aho
7.5 g 1 2 - Vs = 4.5 v - g
8 a @ 200 mA =
a; a " g -0 2
O 0 8 l,
F," s,,,,--'''" 8 -0-4 "s,
ih" > "ss,,
0.4 -0 6
0.0 -0.8
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T: - Junction Temperature CC) To - Junction Temperature CC)
Document Number: 70860 www.vishaycom
S-04279-Rev. C, 16-Jul-01 11 -3
2N7002E
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Capacitance Gate Charge
40 1.0
Vos = 30 V
b = 0.25 A
32 0.8
A Ciss g ",,,/''''
a, 24 > 0.6
JI'. g
m 16 p, 0.4
'i 'ss, g "
O "ss. Coss 8
8 tD 0.2
O 1 0.0
0 5 10 15 20 25 0.0 0.1 0.2 0.3 0.4 0.5
Vos - Drain-to-Source Voltage (V) % - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
www.vishay.com DocumentNumber: 70860
11 -4 S-04279-Rev. C, 16-Jul-01
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