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Partno	Mfg	Dc	Qty	Available	Descript
2N7002CK	NXP	N/a	75000	avai	60 V, 0.3 A N-channel Trench MOSFET

2N7002CK ,60 V, 0.3 A N-channel Trench MOSFETApplicationsn Relay drivern High-speed line drivern Low-side loadswitchn Switching circuits1.4 Quic ..
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2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
Product profile1.1 General description
ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a
small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 3 kV
1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
Rev. 01 — 11 September 2009 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage - - 60 V drain current - - 300 mA
IDM peak drain current single pulse;≤10μs - 1.2 A
RDSon drain-source on-state
resistance
VGS =10V;= 500 mA 1.1 1.6 Ω
NXP Semiconductors 2N7002CK
60 V , 0.3 A N-channel Trench MOSFET Pinning information Ordering information Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 2. Pinning G gate S source D drain
017aaa000
Table 3. Ordering information
2N7002CK TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
2N7002CK LP*
NXP Semiconductors 2N7002CK
60 V , 0.3 A N-channel Trench MOSFET Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm2.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage 25°C≤Tj≤ 150°C - 60 V
VGS gate-source voltage - ±20 V drain current VGS =10V
Tamb =25°C - 300 mA
Tamb= 100°C - 190 mA
IDM peak drain current Tamb =25 °C; tp≤10μs - 1.2 A
Ptot total power dissipation Tamb =25°C [1]- 350 mW junction temperature 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Source-drain diode source current Tamb =25°C - 200 mA
ISM peak source current Tamb =25 °C; tp≤10μs - 1.2 A
ElectroStatic Discharge (ESD)
VESD electrostatic discharge
voltage
all pins;
human body model;= 100 pF;= 1.5kΩ kV
NXP Semiconductors 2N7002CK
60 V , 0.3 A N-channel Trench MOSFET Thermal characteristics
Table 6. Thermal characteristics
Rth(j-a) thermal resistance from
junction to ambient
in free air [1]- 350 500 K/W
NXP Semiconductors 2N7002CK
60 V , 0.3 A N-channel Trench MOSFET
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Characteristics
Rth(j-sp) thermal resistance from
junction to solder point - 150 K/W
Table 6. Thermal characteristics …continued
Table 7. Characteristics
Tamb =25 °C unless otherwise specified.
Static characteristics
V(BR)DSS drain-source breakdown
voltage =10 μA; VGS =0V =25°C 60 --V= −55°C 55 --V
VGS(th) gate-source threshold
voltage= 250 μA; VDS =VGS; =25°C 1.75 2.5 V
IDSS drain leakage current VDS =60V; VGS =0V =25°C - - 100 nA= 150°C --1 μA
IGSS gate leakage current VGS= ±20 V; VDS =0V - - 5 μA
VGS= ±10 V; VDS=0V - 50 450 nA
VGS=±5 V; VDS=0V - - 100 nA
RDSon drain-source on-state
resistance
VGS= 4.5V;= 200 mA =25°C - 1.3 3 Ω= 150°C - 2.8 4.4 Ω
VGS =10V;ID= 500 mA - 1.1 1.6 Ω
Dynamic characteristics
QG(tot) total gate charge ID= 200 mA;
VDS =10V;
VGS= 4.5V 1.09 1.3 nC
QGS gate-source charge - 0.22 - nC
QGD gate-drain charge - 0.23 - nC
Ciss input capacitance VGS =0V; VDS =25V;
f=1MHz 47.2 55 pF
Coss output capacitance - 11 20 pF
Crss reverse transfer
capacitance 5 7.5 pF
td(on) turn-on delay time VDS =15V; =15Ω;
VGS =10V; =6Ω 8 15 ns rise time - 8 15 ns
td(off) turn-off delay time - 38 50 ns fall time - 22 35 ns
Source-drain diode
VSD source-drain voltage IS= 200 mA; VGS=0V 0.47 0.79 1.1 V
NXP Semiconductors 2N7002CK
60 V , 0.3 A N-channel Trench MOSFET
NXP Semiconductors 2N7002CK
60 V , 0.3 A N-channel Trench MOSFET

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