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Partno	Mfg	Dc	Qty	Available	Descript
2N7002BKW	NXP	N/a	30000	avai	60 V, 310 mA N-channel Trench MOSFET

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2N7002BKW
60 V, 310 mA N-channel Trench MOSFET
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified
1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1cm2.
2N7002BKW
60 V, 310 mA N-channel Trench MOSFET
Rev. 1 — 17 June 2010 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tamb =25 °C- - 60 V
VGS gate-source voltage Tamb =25 °C- - ±20 V drain current Tamb =25 °C;
VGS =10V
[1] -- 310 mA
RDSon drain-source on-state
resistance =25 °C;
VGS =10V; ID= 500 mA 1.6 Ω
NXP Semiconductors 2N7002BKW
60 V, 310 mA N-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 2. Pinning G gate source D drain
Table 3. Ordering information
2N7002BKW SC-70 plastic surface-mounted package; 3 leads SOT323
Table 4. Marking codes
2N7002BKW X9*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tamb =25 °C- 60 V
VGS gate-source voltage Tamb =25 °C- ±20 V drain current VGS =10V [1]
Tamb =25 °C- 310 mA
Tamb =100 °C- 215 mA
IDM peak drain current Tamb =25 °C;
single pulse;tp≤10μs
-1.2 A
NXP Semiconductors 2N7002BKW
60 V, 310 mA N-channel Trench MOSFET
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Measured between all pins.
Ptot total power dissipation Tamb =25°C [2] -275 mW
[1] -330 mW
Tsp =25 °C- 880 mW junction temperature 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Source-drain diode source current Tamb =25°C [1] -310 mA
ESD maximum rating
VESD electrostatic discharge
voltage
human body model [3]- 2000 V
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
NXP Semiconductors 2N7002BKW
60 V, 310 mA N-channel Trench MOSFET
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Table 6. Thermal characteristics
Rth(j-a) thermal resistance from
junction to ambient
in free air [1]- 395 455 K/W
[2]- 330 380 K/W
Rth(j-sp) thermal resistance from
junction to solder point - 140 K/W
NXP Semiconductors 2N7002BKW
60 V, 310 mA N-channel Trench MOSFET
NXP Semiconductors 2N7002BKW
60 V, 310 mA N-channel Trench MOSFET
7. Characteristics
[1] Pulse test: tp≤ 300 μs; δ≤ 0.01.
Table 7. Characteristics =25 °C unless otherwise specified.
Static characteristics
V(BR)DSS drain-source breakdown
voltage =10 μA; VGS=0V 60 --V
VGS(th) gate-source threshold
voltage =250 μA; VDS =VGS 1.1 1.6 2.1 V
IDSS drain leakage current VDS =60V; VGS =0V =25°C --1 μA= 150°C --10 μA
IGSS gate leakage current VGS= ±20 V; VDS=0V --10 μA
RDSon drain-source on-state
resistance
[1]
VGS =5V; ID =50mA - 1.3 2 Ω
VGS =10V; ID =500 mA - 1 1.6 Ω
gfs forward
transconductance
VDS =10V; ID= 200 mA [1]- 550 - mS
Dynamic characteristics
QG(tot) total gate charge ID =300 mA;
VDS =30V;
VGS =4.5V
-0.5 0.6 nC
QGS gate-source charge - 0.2 - nC
QGD gate-drain charge - 0.1 - nC
Ciss input capacitance VGS =0V; VDS =10V;
f=1MHz 3350pF
Coss output capacitance - 7 - pF
Crss reverse transfer
capacitance -pF
td(on) turn-on delay time VDD =50V; =250Ω;
VGS =10V; =6Ω 5 10 ns rise time -6 -ns
td(off) turn-off delay time - 12 24 ns fall time - 7 - ns
Source-drain diode
VSD source-drain voltage IS =115 mA; VGS=0V 0.47 0.75 1.1 V
NXP Semiconductors 2N7002BKW
60 V, 310 mA N-channel Trench MOSFET
NXP Semiconductors 2N7002BKW
60 V, 310 mA N-channel Trench MOSFET

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