2N7002 ,N-Channel Enhancement Mode Field Effect TransistorS-04279—Rev. F, 16-Jul-0111-32N7000/2N7002, VQ1000J/P, BS170Vishay Siliconix ..
2N7002_NL , N-Channel Enhancement Mode Field Effect Transistor
2N7002BK ,60 V, 350 mA N-channel Trench MOSFETApplications Relay driver High-speed line driver Low-side loadswitch Switching circuits1.4 Quic ..
2N7002BKS ,60 V, 300 mA dual N-channel Trench MOSFETApplications Relay driver High-speed line driver Low-side loadswitch Switching circuits1.4 Quic ..
2N7002BKW ,60 V, 310 mA N-channel Trench MOSFETApplications Relay driver High-speed line driver Low-side loadswitch Switching circuits1.4 Quic ..
2N7002CK ,60 V, 0.3 A N-channel Trench MOSFETApplicationsn Relay drivern High-speed line drivern Low-side loadswitchn Switching circuits1.4 Quic ..
2SC3187 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3195 , 2SC3229
2SC3195 , 2SC3229
2SC3197 , TO-92 Plastic Package Transistors (NPN)
2SC3197 , TO-92 Plastic Package Transistors (NPN)
2SC3198-Y , TO-92 Plastic Package Transistors (NPN)
2N7002-BS170
N-Channel Enhancement Mode Field Effect Transistor
VISHAY
2N7000l2N7002, VQ1000J/P, BS170
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDSion) Max (C2) VGS(th) (V) ID (A)
2N7000 5 @ VGS =10 V 0.8 to 3 0.2
2N7002 7.5@Vss= 10V 1 to 2.5 0.115
VQ1000J 60 5.5 @ VGS = 10 V 0.8 to 2.5 0.225
VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225
BS170 5@VGS=10V 0.8to3 0.5
FEATURES BENEFITS APPLICATIONS
Low On-Resistance: 2.5 C2
Low Threshold: 2.1 V
Low Input Capacitance: 22 pF
Fast Switching Speed: 7 ns
Low Input and Output Leakage
q Low Offset Voltage
TO-226AA
(TO-92)
Top View
2N7000
Dual-In-Line
k,,....,.,)
FIFIIm—IITIITIITIITI
ss) [ss,
lillillillillillillil
Top View
Plastic: VQ1000J
Sidebraze: VQ1000P
Low-Voltage Operation
Easily Driven VNflthout Buffer
High-Speed Circuits
Low Error Voltage
q Direct Logic-Level Interface: TTL/CMOS
q Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
q Battery Operated Systems
q Solid-State Relays
TO-236
(SOT-23)
Top View
Marking Code: 72w/l
72 = Part Number Code for 2N7002
w = Week Code
II = Lot Traceability
TO-92-1 8RM
(TO-18 Lead Form)
Top Vew
DocumentNumber: 70226
S-04279-Rev. F, 16-Jul-01
www.vishay.com
2N7000l2N7002, VQ1000J/P, BS170
VISHAY
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Single Total Quad
Parameter Symbol 2N7000 2N7002 VQ1000J VQ1000P VtM000JlP BS170 Unit
Drain-Source Voltage V93 60 60 60 60 60
Gate-Source Voltage-Non-Repetitive VGSM i40 i 40 i 30 i 25 V
Gate-Source Voltage-Continuous VGs i 20 cl: 20 i 20 2t 20 i 20
Continuous Drain Current TA-- 2590 I 0.2 0.115 0.225 0.225 0.5
(T: = 150°C) TA=1OO°C D 0.13 0.073 0.14 0.14 0.175 A
Pulsed Drain Currenta IDM 0.5 0.8 1 1
TA-- 25°C 0.4 0.2 1.3 1.3 2 0.83
Power Dissipation TA-- 100°C PD 0.16 0.08 0.52 0.52 0.8 W
Thermal Resistance, Junction-to-Ambient RthJA 312.5 625 96 96 62.5 156 °C/W
"2,ert,tl11il,ugitriru:1ange Tr Tstg -55 to 150 0C
a. Pulse width limited by maximum junction temperature.
b. tp s 50 us.
SPEmF=ATIoNS-2NTtmo AND 2N7002 (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
2N7000 2N7002
Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 WA 70 60 60
VDS = VGS, ID = 1 mA 2.1 0.8 3 v
Gate-Threshold Voltage Vegan) VDs = Was, ID = 0.25 mA 2.0 1 2.5
Vros=0V,Vss=ce15V i10
Gate-Body Leakage IGSS Vos = 0 V, VGS = i 20 V i100 nA
VDS=48V,VGS=0V 1
. l Tc-- 125°C 1000
Zero Gate Voltage Drain Current loss Vos = 60 V, VGS = 0 V 1 11A
l Tc = 125°C 500
On-State Drain Currentb 'D(on) VDS = 10 V, VGS = 4.5 V 0.35 0.075 A
VDS= 7.5 V,VGs=10V 1 0.5
v65: 4.5 V, II): 0.075A 4.5 5.3
veg: 5V, ID-- 0.05A 3.2 7.5
Drain-Source On-Resistanceb roam) I Tc = 125°C 5.8 13.5 g
VGS=1ov, b=0.5A 2.4 5 7.5
l TJ=125°C 4.4 9 13.5
Forward Transconductancdo gfs Vos = 10 V, ID = 0.2 A 100 80
Common Source Output Conductanceb gos VDS = 5 V, ID = 0.05 A 0.5 m8
Dynamic
Input Capacitance Ciss 22 60 50
Output Capacitance Coss Vos = i? y'all}? = 0 V 11 25 25 pF
Reverse Transfer Capacitance Crss 2 5 5
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DocumentNumber: 70226
S-04279-Rev. F, 16-Jul-01
VISHAY
2N7000/2N7002, VQ1000JIP, BS170
Vishay Siliconix
SPEmrrNumoNS-2NTtmo AND 2N7002 (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
2N7000 2N7002
Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Switchingd
Turn-On Time tON VDD = 15 V, RL = 25 g 7 10
Turn-Off Time tOFF ID 50.5 A, VGEN = 10 V, RG = 25 Q 7 10
Turn-On Time toN VDD = 30 V, RL = 150 Q 7 20
Turn-Off Time tOFF In E 0.2 A, VGEN = 10 V, Rs = 25 C2 11 20
SPECIFICATIONS-VN OOOJ/P AND BS1 " (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
VQ1000J/P BS170
Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage V(BR)D53 VGS = 0 V, ID = 100 'uA 7O 60 60
Gate-Threshold Voltage VGS(th) VDs = VGS, ID = 1 mA 2.1 0.8 2.5 0.8 3
Vr)s=0V,VGs=ce10V i100
Gate-Body Leakage loss To = 125°C ce 500 nA
1/Ds=0N/,VGs=ce151/ i10
Vos=25 V,N/GS= OV 0.5
Zero Gate Voltage Drain Current loss Vos = 48 V, VGS = 0 V, TJ = 125°C 500 “A
VDs=60V,VGs=0V 10
On-State Drain Currentb |D(on) Vos = 10 V, Was = 10 V 0.5 A
VCs-- 5V, ID: 0.2A 4 7.5
Veg: 10 V, |D=0.2A 2.3 5
Drain-Source On-Resistanceb rDS(0n) Q
VGS=1OV, ID: 0.3A 2.3 5.5
To = 125°C 4.2 7.6
N/Ds=10V,lD=0.2A 100
Forward Transconductancdo gfs
VDS=1O Vlro=0.5A 100 ms
Common Source Output Conductanceb Jos 1/ros =5 V, ID = 0.05 A 0.5
Dynamic
Input Capacitance Ciss 22 60 60
. V =25 V, V = 0 V
Output Capacitance Coss DS f= 1 Mg: 11 25 pF
Reverse Transfer Capacitance Crss 2 5
Switchingd
Turn-On Time tON VDD = 15 V, RL = 23 Q 7 10
Turn-Off Time [OFF ID a 0.6 A, VGEN = 10 V, RG = 25 Q 7 10
Turn-On Time tON VDD = 25 V, RL = 125 Q 7 10
Turn-Off Time tOFF ID - 0.2 A, VGEN = 10 V, RG = 25 Q 7 10
. For DESIGN AID ONLY, not subject to production testing. VNBF06
b. Pulse test: PW s80 ps duty cycle 51%.
c This parameter not registered with JEDEC.
Switching time is essentially independent of operating temperature.
DocumentNumber: 70226
S-04279-Reu. F, 16-Jul-01
www.vishay.com
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Output Characteristics Transfer Characteristics
1.0 1.0
Vss=10,9,8,7V /
0.8 0.8
T J = -55''C
a" a" 25°C
:7 0.6 2: 0.6
c C f,
g eg /
o o f 125°C
E 0.4 E 0.4
0.2 0.2
0.0 - 2, 1 V 0.0
O 1 2 3 4 5 6 0 1 2 3 4 5 6 7 8
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
7 60 I f
VGS = 0 V
I f= 1 MHz
G ros @ 5 V = VGS
o5. rk" 40
ii' 4 8 (
tlt s.,,,,,,..--"'" F, 30
c o...---"''" 15 C;
, 3 r05@10V=VGS - (ii. IISS
Iii," o 20 I
g 2 g \ 'ss,,,... Coss
Ns,,,,. Crss
a-..-, I
0.0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30 35
ID - Drain Current (A) Vros - Drain-to-Source Voltage (V)
20 Gate Charge 2 0 On-Resistance vs. Junction Temperature
b = 0.5 A /''" w,,,,,,,,,-''''',',',
A 16 / VGS=10V,
[email protected] ops'''' -
2, " _ 1.5
5 EA ass"'"
is,'' 12 / tf',.h' op''''''
V = 30 V - m
5 / DS ii' E 1.0 I
Ji 8 / 5't sssss"' Vss=5V,ts@th05A
g " O "e','.
g, 'e tF'"
(D tif 0.5
I 4 J?
0 400 800 1200 1600 2000 2400 -55 -30 -5 20 45 70 95 120 145
Qg - Total Gate Charge (pC) TJ - Junction Temperature (°C)
www.vishay.com Document Number: 70226
11-4 S-04279-Rev. F, 16-Jul-01
VISHAY 2N7000/2N7002, VQ1000JIP, BS170
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
1.000 6
5 " l ID = 50 mA
T J = 125°C A "il" l
Ci:.] 0.100 8 4 500 mA
8 § 3 (y,
e 8 'Ac..
8 I "''"''mtme-
, 0.010 e 2
An 'ill'"
0.001 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 12 14 16 18 20
V50 - Source-to-Drain Voltage (V) Veg - Gate-to-Source Voltage (V)
Threshold Voltage
0.50 l l
ID = 250 “A
0.25 "ss,
8 -0.00
"ii' -0.25
-50 -25 0 25 50 75 100 125 150
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (T0-226AA, BS170 Only)
Duty Cycle = 0.5
Notes:
Thermal Impedance
-5 tl _
- t2 -
1. Duty Cycle, D = rl
2. Per Unit Base = Rth0A = 156°CNV
Normalized Effective Transient
. 3. TJM - TA = PDMZthJAm
Single Pulse
0.1 1 10 100 1 K 10 K
" - Square Wave Pulse Duration (sec)
Document Number: 70226 www.vishay.com
S-04279-Reu. F, 16-Jul-01 11-5
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