IRFF9230 ,-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF packagePD - 90551D ..
IRFF9230 ,-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF packageFeatures:age control, very fast switching, ease of parelleling Repetitive Avalanche Ratingsand tem ..
IRFG110 ,100V Quad N-Channel MOSFET in a MO-036AB packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
IRFG5110 ,100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB packageElectrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise Specified)Param ..
IRFG6110 ,100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB packageElectrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise Specified)Param ..
IRFG9110 ,100V Quad P-Channel MOSFET in a MO-036AB packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
ISL6443AIRZ , 300kHz Dual, 180° Out-of-Phase, Step-Down PWM and Single Linear Controller
ISL6443IRZ-T , 300kHz Dual, 180 Degree Out-of-Phase, Step-Down PWM and Single Linear Controller
ISL6443IRZ-T , 300kHz Dual, 180 Degree Out-of-Phase, Step-Down PWM and Single Linear Controller
ISL6443IRZ-TK , 300kHz Dual, 180 Degree Out-of-Phase, Step-Down PWM and Single Linear Controller
ISL6444CA ,Dual PWM Controller with DDR Memory Option for Gateway Applicationsfeatures essential for o- Out-of-phase operation with 90 phase shift for two-proper powering of DDR ..
ISL6444CA-T ,Dual PWM Controller with DDR Memory Option for Gateway ApplicationsApplicationsThe ISL6444 monitors the output voltages. Each PWM controller generates a PGOOD (power ..
2N6851-IRFF9230-JANTX2N6851-JANTXV2N6851
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
International
IEZR Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED
HEiXFEiT"TRANSityrORs
THRU-HOLE (TO-205AF)
ProductSummary
Part Number BVDSS RDS(on) ID
IRFF9230 -200V 0.809 -4.0A
The HEXFET®technology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
PD - 90551 D
IRFF923O
JANTX2N6851
JANTXV2N6851
J AN S2 N 68 51
REF:MIL-PRF-19500I564
200V, P-CHANNEL
tt"'jr
Hinéif
Features:
a Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Parameter Units
ID @ VGS = -10V, TC = 25°C Continuous Drain Current -4.0
t @ VGS = -10\/, TC = 100°C Continuous Drain Current -2.4 A
I D M PuIsed Drain Current C) -16
PD @ Tc = 25°C Max. Power Dissipation 25 IN
Linear Derating Factor 0.20 W/°C
ve Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy © 75 m]
IAR Avalanche Current Cf) - A
EAR Repetitive Avalanche Energy co - ntl
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 0.98(typical) g
For footnotes refer to the last page
1
04/20/01
IRFF9230
International
TOR Rectifier
Electrical Characteristics @T] = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDss Drain-to-Source Breakdown Voltage -200 - - V VGS = 0V, ID = -1.0mA
ABVDss/ATJ Temperature Coeffcient of Breakdown - -0.22 - V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.80 f2 VGS = -10\/, ID = -2.4A C4
Resistance - - 1.68 VGS =-10V, ID =-4.0A co
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDS = VGS, ID = -250yA
git Forward Transconductance 2.2 - - S " VDS > -15\/, IDS = -2.4A ©
toss Zero Gate Voltage Drain Current - - -25 VDS= -160V, VGs=0V
- - -250 pA VDS = -160V
VGS = 0V, TJ = 125°C
Lass Gate-to-Source Leakage Forward - - -100 VGS = -20V
less Gate-to-Source Leakage Reverse - - 100 nA VGS = 20V
A Total Gate Charge 14.7 - 34.8 VGS =-10V, ID = -4.0A
qr Gate-to-Source Charge 0.8 - 7.0 nC VDS= -100V
09d Gate-to-Drain ('Miller') Charge 5.0 - 17
td(on) Turn-On Delay Time - - 50 VDD = -100V, ID = -4.0A,
tr Rise Time - - 100 VGS =-10V,RG =7.5Q
td(off) Turn-Off Delay Time - - 100 ns
tf Fall Time - - 80
LS + LD Total Inductance - 7.0 - nH Measured from drainlead(6rrm/0.25in.frorn
package) to source lead (6mm/O.25in. from
package)
Ciss Input Capacitance - 700 VGS = 0V, VDS = -25V
Ctrss OutputCapacitance - 200 - pF f = 1.0MHz
Ciss Reverse Transfer Capacitance - 40 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - -4.0 A
ISM Pulse Source Current (Body Diode) (I) - - -20
VSD Diode Forward Voltage - - -6.0 V T] = 25°C, Is =-4.0A, VGS = 0V ©
trr Reverse Recovery Time - - 400 rS T] = 25°C, IF = -4.0A, di/dt s -100A/ps
QRR Reverse Recovery Charge - - 4.0 pf VDD s -50V @
ton Forward Turn-On Time Intrinsic tum-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units TestConditions
RthJC Junction-to-Case - - 5.0 o
RthJA Junction-to-Ambient - - 175 CMI Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
