JANTX2N6849 ,-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF packagePD - 90550D IRFF9130 JAN ..
JANTX2N6849 ,-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF packagePD - 90550D IRFF9130 JAN ..
JANTX2N6849 ,-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF packageFeatures:age control, very fast switching, ease of parelleling Repetitive Avalanche Ratingsand tem ..
JANTX2N6851 ,-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF packageapplications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
JANTX2N7225 ,200V Single N-Channel Hi-Rel MOSFET in a TO-254AA packagePD - 90554EIRFM250JANTX2N7225JANTXV2N7225POWER MOSFETREF:MIL-PRF-19500/592THRU-HOLE (TO-254AA) 200V ..
JANTX2N918 , NPN LOW POWER SILICON TRANSISTOR
K7A161830B-QC16 , 512Kx36 & 1Mx18 Synchronous SRAM
K7A203200B-QC14 , 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
K7A203600B-QC14 , 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
K7A801800B-QC14 , 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7A803600B-QC14 , 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7A803609B-QC25 , 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
2N6849-IRFF9130-JANTX2N6849
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
International
PD - 90550D
itlly . . r IRFF913O
21t2iR Rectifie JANTX2N6849
REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849
HEiXFEiT"TRANSityrORs JANS2N6849
THRU-HOLE (TO-205AF)
ProductSummary
Part Number BVDSS RDS(on) ID
IRFF9130 -100V 0.309 -6.5A
The HEXFET®technology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
REF:MlL-PRF-19500/564
100V, P-CHANNEL
Features:
a Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Parameter Units
ID @ VGS = -10V, TC = 25°C Continuous Drain Current -6.5
t @ VGS = -10\/, TC = 100°C Continuous Drain Current -4.1 A
I D M PuIsed Drain Current C) -25
PD @ Tc = 25°C Max. Power Dissipation 25 IN
Linear Derating Factor 0.20 W/°C
ve Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy © 92 m]
IAR Avalanche Current Cf) - A
EAR Repetitive Avalanche Energy co - ntl
dv/dt Peak Diode Recovery dv/dt © -5.5 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 0.98(typical) g
For footnotes refer to the last page
1
04/20/01
IRFF9130 International
TOR Rectifier
Electrical Characteristics @T] = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDss Drain-to-Source Breakdown Voltage -100 - - V VGS = 0V, ID = -1.0mA
ABVDss/ATJ Temperature Coeffcient of Breakdown - -0.10 - V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.30 Q VGS = -10\/, ID = -4.1A C4
Resistance - - 0.345 VGS =-10V, ID =-6.5A CO
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDS = VGS, ID = -250yA
git Forward Transconductance 2.5 - - S th VDS > -15\/, IDS = -4.1A ©
toss Zero Gate Voltage Drain Current - - -25 V03: -80\/, VGs=0V
- - -250 pA VDS = -80V
VGS = 0V, TJ = 125°C
Lass Gate-to-Source Leakage Forward - - -100 VGS = -20V
less Gate-to-Source Leakage Reverse - - 100 nA VGS = 20V
(k; Total Gate Charge 14.7 - 34.8 VGS =-10V, ID = -6.5A
qr Gate-to-Source Charge 1 .0 - 7.1 nC VDS= -50V
09d Gate-to-Drain ('Miller') Charge 2.0 - 21
td(on) Turn-On Delay Time - - 60 VDD = -50\/, ID = -6.5A,
tr Rise Time - - 140 VGS =-10V,RG =7.5Q
tdmm Turn-Off Delay Time - - 140 ns
tf Fall Time - - 140
LS + LD Total Inductance - 7.0 - nH Measured from drainlead(6rrm/0.25in.frorn
package) to source lead (6mm/O.25in. from
package)
Ciss Input Capacitance - 800 VGS = 0V, VDS = -25V
Ctrss OutputCapacitance - 350 - pF f = 1.0MHz
Ciss Reverse Transfer Capacitance - 125 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - -6.5 A
ISM Pulse Source Current (Body Diode) (I) - - -25
VSD Diode Forward Voltage - - -4.7 V T] = 25°C, Is =-6.5A, VGS = 0V ©
trr Reverse Recovery Time - - 250 rS T] = 25°C, IF = -6.5A, di/dt s -100A/ps
QRR Reverse Recovery Charge - - 3.0 1.0 VDD s -50V @
ton Forward Turn-On Time Intrinsic tum-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 5.0 o
RthJA Junction-to-Ambient - - 175 CMI Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
