JANTX2N6845 ,-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF packagePD - 90552CIRFF9120REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6845HEXFET TRANSISTORS JANTXV2N68 ..
JANTX2N6845 ,-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF packageapplications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
JANTX2N6847 ,-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF packageFeatures:age control, very fast switching, ease of parelleling Repetitive Avalanche Ratingsand tem ..
JANTX2N6849 ,-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF packagePD - 90550D IRFF9130 JAN ..
JANTX2N6849 ,-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF packagePD - 90550D IRFF9130 JAN ..
JANTX2N6849 ,-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF packageFeatures:age control, very fast switching, ease of parelleling Repetitive Avalanche Ratingsand tem ..
K7A161830B-QC16 , 512Kx36 & 1Mx18 Synchronous SRAM
K7A203200B-QC14 , 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
K7A203600B-QC14 , 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
K7A801800B-QC14 , 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7A803600B-QC14 , 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7A803609B-QC25 , 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
2N6845-IRFF9120-JANTX2N6845
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
International
IEZR Rectifier
REPETITIVE AVALANCHE AND tiv/tit RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS RDS(on) ID
IRFF9120 -100V 0.609 -4.0A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
PD - 90552C
IRFF9120
J ANTX2N6845
JANTXV2N6845
REF:MIL-PRF-19500/563
100V, P-CHANNEL
Features:
I: Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Parameter Units
ID @ VGS = -10V, TC = 25°C Continuous Drain Current -4.0
1D @ VGS = -10V, TC = 100°C Continuous Drain Current -2.6 A
IDM Pulsed Drain Current C) -16
PD @ TC = 25°C Max. Power Dissipation 20 W
Linear Derating Factor 0.16 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 1 15 m1
IAR Avalanche Current Cf) - A
EAR Repetitive Avalanche Energy co - mJ
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 0.98(typica1) g
For footnotes refer to the last page
1
01/22/01
IRFF9120 International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -100 - - V VGS = 0V, ID = -1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - -0.10 - VPC Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.60 Q VGS = -10V, ID = -2.6A ©
Resistance - - 0.69 VGS =-10V, ID =-4.0A co
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDS = VGS, ID = -250pA
gfs Forward Transconductance 1.25 - - S 75) VDS > -15V, IDS = -2.6A GD
IDSS Zero Gate Voltage Drain Current - - -25 VDS= -80V,VGS=0V
- - -250 WA VDS = -80V
VGS = 0V, T] = 125°C
IGSS Gate-to-Source Leakage F orward - - -100 VGS = -20V
IGSS Gate-to-Source Leakage Reverse - - 100 nA VGS = 20V
% Total Gate Charge 4.3 - 16.3 VGS =-10V, ID = -4.0A
Qgs Gate-to-Source Charge 1.3 - 4.7 nC VDS= -50V
Qgd Gate-to-Drain (Niller') Charge 1.0 - 9.0
td(0n) Turn-On Delay Time - - 6O VDD = -50V, ID = -4.0A,
tr Rise Time - - 100 RG =75!)
Wom Turn-Off Delay Time - - 50 ns
tf Fall Time - - 70
LS + LD Total Inductance - 7.0 - nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance - 380 VGS = 0V, VDS = -25V
Cogs Output Capacitance - 170 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 45 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - -4.0 A
ISM Pulse Source Current (Body Diode) (I) - - -16
VSD Diode Forward Voltage - - -4.8 V Tj = 25°C, Is =-4.0A, VGS = 0V ©
trr Reverse Recovery Time - - 200 nS Tj = 25°C, IF = -4.0A, di/dt S -100A/us
QRR Reverse Recovery Charge - - 3.1 “C VDD S -50V @
ton F orward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 6.25 o
RthJA Junction-to-Ambient - - 175 C/W Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
