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2N6802-JANTXV2N6802
500V Single N-Channel Hi-Rel MOSFET in a TO-205AF package
International
IEZR Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS RDS(on) ID
IRFF43O 500V 159 2.5A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
PD -90433C
IRFF43O
J ANTX2N6802
JANTXV2N6802
REFzMIL-PRF-19500/557
500V, N-CHANNEL
tt"'jr
ll {£535
Features:
I: Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 2.5
1D @ VGS = 10V, TC = 100°C Continuous Drain Current 1.5 A
IDM Pulsed Drain Current C) 1 1
PD @ TC = 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.20 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 0.35 mJ
IAR Avalanche Current Cf) - A
EAR Repetitive Avalanche Energy co - m.)
dv/dt Peak Diode Recovery dv/dt © 3.5 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 0.98(typica1) g
For footnotes refer to the last page
1
01/22/01
IRFF430 International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 500 - - V VGS = 0V, 1D = 1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - 0.43 - VPC Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 1.5 Q VGS = 10V, ID =1.5A ©
Resistance - - 1.725 VGS =10V, ID =2.5A co
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 250yA
gfs Forward Transconductance 1.5 - - S (U) VDS > 15V, IDS = 1.5A co
IDSS Zero Gate Voltage Drain Current - - 25 VDS= 400V, VGs=0V
- - 250 HA VDS = 400V
VGS = 0V, T] = 125°C
IGSS Gate-to-Source Leakage Forward - - 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse - - -100 nA VGS = -20V
Qg Total Gate Charge 19.8 - 29.5 VGS =10V, ID =2.5A
oy Gate-to-Source Charge 2.2 - 4.6 nC VDS= 250V
Qgd Gate-to-Drain (Niller') Charge 5.5 - 19.7
td(0n) Turn-On Delay Time - - 3O VDD = 250V, ID = 2.5A,
tr Rise Time - - 30 RG = 7,59
Wom Turn-Off Delay Time - - 55 ns
tf Fall Time - - 30
LS + LD Total Inductance - 7.0 - nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance - 610 VGS = 0V, VDS = 25V
Cogs Output Capacitance - 135 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 65 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 2.5 A
ISM Pulse Source Current (Body Diode) (I) - - l 1
VSD Diode Forward Voltage - - 1.4 V Ti = 25°C, Is =2.5A, VGS = 0V ©
trr Reverse Recovery Time - - 900 nS Tj = 25°C, IF =2.5A, di/dt f 100A/1Ls
QRR Reverse Recovery Charge - - 7.0 “C VDD S 50V ©
ton F orward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 5.0 'C/W
RthJA Junction-to-Ambient - - 175 Typical socket mount.
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
