2N6800 ,400V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageapplications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
2N6800 ,400V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageapplications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
2N6800 ,400V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageFeatures:age control, very fast switching, ease of parelleling Repetitive Avalanche Ratingsand tem ..
2N6800 ,400V Single N-Channel Hi-Rel MOSFET in a TO-205AF packagePD - 90432CIRFF330REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6800HEXFET TRANSISTORS JANTXV2N680 ..
2N6802 ,500V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageFeatures:age control, very fast switching, ease of parelleling Repetitive Avalanche Ratingsand tem ..
2N681 ,Leaded Thyristor SCRFeatures
I General purpose stud mounted
I Broad forward and reverse
voltage range - through 12 ..
2SC3135 ,NPN Epitaxial Planar Silicon Transistors High-hFE, AF Amp ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3138 ,Transistor Silicon NPN Triple Diffused Type (PCT process) High Voltage Switching ApplicationsApplications Unit: mm High voltage: V = 200 V (max) CBO V = 200 V (max) CEO Small flat pack ..
2SC3142 ,NPN Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3143 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, AF Power Amp, 100W Output Predriver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3144 ,NPN Epitaxial Planar Silicon Darlington Transistors 60V/3A for High-Speed Drivers ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3148 ,Silicon NPN Power Transistors TO-220C packageAPPLICATIONS. I I1nRMAX (£3,6i021Excellent Sw1tch1ng '1'1mes (10:0.8A)1n 1;" I 1n ,MTT? AA -[1,11tr ..
2N6800-IRFF330-JANTX2N6800
400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package
International
IEZR Rectifier
PD - 90432C
IRFF33O
REPETITIVE AVALANCHE AND dv/dt RATED J ANTX2N6 8 0 0
HEXFET®TRANSISTORS JANTXV2N6800
THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS RDS(on) ID
IRFF33O 400V 109 3.0A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
REFzMIL-PRF-19500/557
400V, N-CHANNEL
Features:
I: Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 3.0
1D @ VGS = 10V, TC = 100°C Continuous Drain Current 2.0 A
IDM Pulsed Drain Current C) 14
PD @ TC = 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.20 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 0.51 mJ
IAR Avalanche Current Cf) - A
EAR Repetitive Avalanche Energy co - m.)
dv/dt Peak Diode Recovery dv/dt © 4.0 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 0.98(typica1) g
For footnotes refer to the last page
1
01/22/01
IRFF330 International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 400 - - V VGS = 0V, 1D = 1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - 0.37 - VPC Reference to 25°C, 1D = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 1.0 Q VGS = 10V, ID = 2.0A ©
Resistance - - 1.15 VGS =10V,1D =3.0A co
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 250yA
gfs Forward Transconductance 2.0 - - S (U) VDS > 15V, IDS = 2.0A ©
IDSS Zero Gate Voltage Drain Current - - 25 VIDS-- 320V, VGs=0V
- - 250 WA VDS = 320V
VGS = 0V, T] = 125°C
IGSS Gate-to-Source Leakage Forward - - 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse - - -100 nA VGS = -20V
Qs Total Gate Charge 19.1 - 33 VGS =10V, ID =3.0A
Qgs Gate-to-Source Charge 1.0 - 5.8 nC VDS= 200V
Qgd Gate-to-Drain ('Miller') Charge 6.7 - 19.9
td(on) Turn-On Delay Time - - 30 VDD = 200V, ID = 3.0A,
tr Rise Time - - 35 n s RG = 7.59
td(oft) Turn-Off Delay Time - - 55
tf Fall Time - - 35
LS + LD Total Inductance - 7.0 - nH Measured from drain lead (6mm/O.251n. from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance - 620 VGS = 0V, VDS = 25V
Coss Output Capacitance - 200 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 75 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 3.0 A
ISM Pulse Source Current (Body Diode) (I) - - 14
VSD Diode Forward Voltage - - 1.4 V Ti = 25°C, Is =3.0A, VGS = 0V ©
trr Reverse Recovery Time - - 700 nS Tj = 25°C, IF =3.0A, di/dt f 100A/us
QRR Reverse Recovery Charge - - 6.2 “C VDD S 50V ©
ton F orward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 5.0 'C/W
RthJA Junction-to-Ambient - - 175 Typical socket mount.
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
