2N6798 ,200V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageFeatures:age control, very fast switching, ease of parelleling Repetitive Avalanche Ratingsand tem ..
2N6800 ,400V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageapplications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
2N6800 ,400V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageapplications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
2N6800 ,400V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageFeatures:age control, very fast switching, ease of parelleling Repetitive Avalanche Ratingsand tem ..
2N6800 ,400V Single N-Channel Hi-Rel MOSFET in a TO-205AF packagePD - 90432CIRFF330REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6800HEXFET TRANSISTORS JANTXV2N680 ..
2N6802 ,500V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageFeatures:age control, very fast switching, ease of parelleling Repetitive Avalanche Ratingsand tem ..
2SC3133 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SC3133 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SC3133 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SC3133 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SC3134 ,NPN Epitaxial Planar Silicon Transistors High Vebo, AF Amp ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3135 ,NPN Epitaxial Planar Silicon Transistors High-hFE, AF Amp ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2N6798-IRFF230-JANTX2N6798-JANTXV2N6798
200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package
International
IEZR Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS RDS(on) ID
IRFF23O 200V 0.409 5.5A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
PD -9043 1C
IRFF23O
J ANTX2N6798
JANTXV2N6798
REFzMIL-PRF-19500/557
200V, N-CHANNEL
Features:
I: Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 5.5
1D @ VGS = 10V, TC = 100°C Continuous Drain Current 3.5 A
IDM Pulsed Drain Current C) 22
PD @ TC = 25°C Max. Power Dissipation 25 W
Linear Derating Factor 0.20 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 54 mJ
IAR Avalanche Current Cf) - A
EAR Repetitive Avalanche Energy co - mJ
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 0.98(typica1) g
For footnotes refer to the last page
1
01/22/01
IRFF230 International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, 1D = 1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - 0.25 - VPC Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.40 Q VGS = 10V, ID = 3.5A ©
Resistance - - 0.46 VGS =10V, 1D =5.5A co
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 250yA
gfs Forward Transconductance 2.5 - - S (U) VDS > 15V, IDS = 3.5A co
IDSS Zero Gate Voltage Drain Current - - 25 VDS= 160V, VGs=0V
- - 250 HA VDS = 160V
VGS = 0V, T] = 125°C
IGSS Gate-to-Source Leakage Forward - - 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse - - -100 nA VGS = -20V
Qg Total Gate Charge T4 - 42.1 VGS =10V, ID =5.5A
Qgs Gate-to-Source Charge 2.5 - 5.3 nC VDS= 100V
Qgd Gate-to-Drain (Niller') Charge 6.0 - 28
td(0n) Turn-On Delay Time - - 3O VDD = 100V, ID = 55A,
tr Rise Time - - 50 RG = 7,59
Wom Turn-Off Delay Time - - 50 ns
tf Fall Time - - 40
LS + LD Total Inductance - 7.0 - nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/025in. from
package)
Ciss Input Capacitance - 600 VGS = 0V, VDS = 25V
Cogs Output Capacitance - 250 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 80 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 5.5 A
ISM Pulse Source Current (Body Diode) (I) - - 22
VSD Diode Forward Voltage - - 1.4 V Ti = 25°C, Is =5.5A, VGS = 0V ©
trr Reverse Recovery Time - - 500 nS Tj = 25°C, IF =5.5A, di/dt f lOOA/us
QRR Reverse Recovery Charge - - 6.0 11C VDD S 50V ©
ton F orward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 5.0 'C/W
RthJA Junction-to-Ambient - - 175 Typical socket mount.
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
