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2N6790ON/STN/a1000avai3.5A/ 200V/ 0.800 Ohm/ N-Channel Power


2N6790 ,3.5A/ 200V/ 0.800 Ohm/ N-Channel PowerFeaturesMOSFET• 3.5A, 200VThe 2N6790 is an N-Channel enhancement mode silicon = 0.800Ω•rDS(ON) gate ..
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2SC3133 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
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2N6790
3.5A/ 200V/ 0.800 Ohm/ N-Channel Power
2N6790
3.5A, 200V, 0.800 Ohm, N-Channel Power
MOSFET

The 2N6790 is an N-Channel enhancement mode silicon
gate power MOS field effect transistor designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. This device can be operated directly
from an integrated circuit.
Features
3.5A, 200V
DS(ON)
= 0.800 SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-205AF
Ordering Information

NOTE: When ordering, include the entire part number.
SOURCE
DRAIN
(CASE)
GATE
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