2N6784 ,200V Single N-Channel Hi-Rel MOSFET in a TO-205AF packagePD - 90424CIRFF210REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6784HEXFET TRANSISTORS JANTXV2N678 ..
2N6788 ,N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V.PD - 90426CIRFF120REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6788HEXFET TRANSISTORS JANTXV2N678 ..
2N6790 ,3.5A/ 200V/ 0.800 Ohm/ N-Channel PowerFeaturesMOSFET• 3.5A, 200VThe 2N6790 is an N-Channel enhancement mode silicon = 0.800Ω•rDS(ON) gate ..
2N6792 ,400V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageapplications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
2N6796 ,8A, 100V, 0.180 Ohm, N-Channel Power MOSFETapplications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
2N6798 ,200V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageFeatures:age control, very fast switching, ease of parelleling Repetitive Avalanche Ratingsand tem ..
2SC3127 , isc Silicon NPN RF Transistor
2SC3127ID-TL-E , Silicon NPN Epitaxial
2SC3128 , Silicon NPN Epitaxial
2SC3128 , Silicon NPN Epitaxial
2SC3130 ,Small-signal deviceFeatures3• High transition frequency fT• Small collector output capacitance (Common base, input ope ..
2SC3133 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2N6784-IRFF210
200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package
PD - 90424C
International
IEZR Rectifier
IRFF210
REPETITIVE AVALANCHE AND dv/dt RATED J ANTX2N6 784
HEXFET®TRANSISTORS JANTXV2N6784
THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556
200V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRFF210 200V 159 2.25A
© . . light
The HEXFET technology IS the key to International ', {5+
Rectifier’s advanced line of power MOSFET transistors. . I--, '
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis- T0-39
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt- Features:
age control, very fast switching, ease of parelleling n
. . . Repetitive Avalanche Ratings
and temperature stability of the electrical parameters.
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 2.25
1D @ VGS = 10V, TC = 100°C Continuous Drain Current 1.50 A
IDM Pulsed Drain Current C) 9.0
PD @ TC = 25°C Max. Power Dissipation 15 W
Linear Derating Factor 0.12 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 48 m1
IAR Avalanche Current Cf) - A
EAR Repetitive Avalanche Energy co - mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 0.98(typica1) g
For footnotes refer to the last page
1
01/22/01
IRFF210 International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, 1D = 1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - 0.25 - VPC Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 1.5 VGS = 10V, ID = 1.50A ©
Resistance - - 1.725 n VGS =10V, ID = 2.25A co
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 250uA
gfs Forward Transconductance 0.9 - - S (U) VDS > 15V, IDS = 1.50A CO
IDSS Zero Gate Voltage Drain Current - - 25 VDS= 160V, VGs=0V
- - 250 HA VDS = 160V
VGS = 0V, T] = 125°C
IGSS Gate-to-Source Leakage Forward - - 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse - - -100 nA VGS =-20V
Qg Total Gate Charge 4.3 - 6.2 VGS =10V, ID = 2.25A
oy Gate-to-Source Charge 0.7 - 1.2 nC VDs=100V
Qgd Gate-to-Drain (Niller') Charge 0.5 - 5.0
td(0n) Turn-On Delay Time - - 15 VDD = 100V, 1D = 2.25A,
tr Rise Time - - 20 RG = 7.59
Wom Turn-Off Delay Time - - 30 ns
tf Fall Time - - 20
LS + LD Total Inductance - 7.0 - nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/025in. from
package)
Ciss Input Capacitance - 140 VGS = 0V, VDS = 25V
Cogs Output Capacitance - 55 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 8.6 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 2.25 A
ISM Pulse Source Current (Body Diode) (I) - - 9.0
VSD Diode Forward Voltage - - 1.5 V Tj = 25°C, Is =2.25A, VGS = 0V C4
trr Reverse Recovery Time - - 350 nS Tj = 25°C, IF = 2.25A, di/dt S l00A/ps
QRR Reverse Recovery Charge - - 3.0 “C VDD S 50V ©
ton F orward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 8.3 'C/W
RthJA Junction-to-Ambient - - 175 Typical socket mount.
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
