2N6782 ,N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V.applications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
2N6782 ,N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V.PD - 90423CIRFF110REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6782HEXFET TRANSISTORS JANTXV2N678 ..
2N6782 ,N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V.applications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
2N6784 ,200V Single N-Channel Hi-Rel MOSFET in a TO-205AF packagePD - 90424CIRFF210REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6784HEXFET TRANSISTORS JANTXV2N678 ..
2N6788 ,N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V.PD - 90426CIRFF120REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6788HEXFET TRANSISTORS JANTXV2N678 ..
2N6790 ,3.5A/ 200V/ 0.800 Ohm/ N-Channel PowerFeaturesMOSFET• 3.5A, 200VThe 2N6790 is an N-Channel enhancement mode silicon = 0.800Ω•rDS(ON) gate ..
2SC3124 ,Transistor Silicon NPN Epitaxial Planar Type TV Tuner, VHF Oscillator ApplicationsApplications Unit: mm Maximum Ratings (Ta 25°C)Characteristics Symbol Rating Unit Collector ..
2SC3125 ,Transistor Silicon NPN Epitaxial Planar Type TV Final Picture IF Amplifier ApplicationsApplications Unit: mm Good linearity of f T Maximum Ratings (Ta 25°C)Characteristics Sym ..
2SC3127 , isc Silicon NPN RF Transistor
2SC3127ID-TL-E , Silicon NPN Epitaxial
2SC3128 , Silicon NPN Epitaxial
2SC3128 , Silicon NPN Epitaxial
2N6782-IRFF110-JANTX2N6782
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V.
International
IEZR Rectifier
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS RDS(on) ID
IRFFl 10 100V .609 3.5A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
PD - 90423C
IRFFllO
J ANTX2N6782
JANTXV2N6782
REF:MIL-PRF-19500/556
100V, N-CHANNEL
Features:
I: Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 3.5
1D @ VGS = 10V, TC = 100°C Continuous Drain Current 2.25 A
IDM Pulsed Drain Current C) 14
PD @ TC = 25°C Max. Power Dissipation 15 W
Linear Derating Factor 0.12 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 68 m1
IAR Avalanche Current Cf) - A
EAR Repetitive Avalanche Energy co - mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 0.98(typica1) g
For footnotes refer to the last page
1
01/22/01
IRFF110 International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, 1D = 1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - 0.10 - VPC Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.60 VGS = 10V, ID = 2.25A C4
Resistance - - 0.69 n VGS =10V, ID = 3.5A co
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 250yA
gfs Forward Transconductance 0.8 - - S (U) VDS > 15V, IDS = 2.25A CO
IDSS Zero Gate Voltage Drain Current - - 25 VDS= 80V, VGs=0V
- - 250 HA VDS = 80V
VGS = 0V, T] = 125°C
IGSS Gate-to-Source Leakage Forward - - 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse - - -100 nA VGS = -20V
Qg Total Gate Charge 4.1 - 6.5 VGS =10V, ID = 3.5A
oy Gate-to-Source Charge 0.4 - 1 .6 nC VDS= 50V
Qgd Gate-to-Drain (Niller') Charge 14 - 3.5
td(0n) Turn-On Delay Time - - 15 VDD = 50V, ID = 3.5A,
tr Rise Time - - 25 RG = 7.59
Wom Turn-Off Delay Time - - 25 ns
tf Fall Time - - 20
LS + LD Total Inductance - 7.0 - nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.2Sin. from
package)
Ciss Input Capacitance - 180 VGS = 0V, VDS = 25V
Cogs Output Capacitance - 82 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 15 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - 3.5 A
ISM Pulse Source Current (Body Diode) (I) - 14
VSD Diode Forward Voltage - 1.5 V Ti = 25°C, Is =3.5A, VGS = 0V ©
trr Reverse Recovery Time - 180 nS Tj = 25°C, IF = 3.5A, di/dt S lOOA/us
QRR Reverse Recovery Charge - 2.0 “C VDD S 50V ©
ton F orward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 8.3 'C/W
RthJA Junction-to-Ambient - - 175 Typical socket mount.
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
