2N6762 ,N-Channel Power MOSFETs/ 4.5A/ 450V/500Vapplications such as switching Hermetically Sealedpower supplies, motor controls, inverters, chopp ..
2N6782 ,N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V.applications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
2N6782 ,N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V.PD - 90423CIRFF110REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6782HEXFET TRANSISTORS JANTXV2N678 ..
2N6782 ,N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V.applications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
2N6784 ,200V Single N-Channel Hi-Rel MOSFET in a TO-205AF packagePD - 90424CIRFF210REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6784HEXFET TRANSISTORS JANTXV2N678 ..
2N6788 ,N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V.PD - 90426CIRFF120REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6788HEXFET TRANSISTORS JANTXV2N678 ..
2SC3124 ,Transistor Silicon NPN Epitaxial Planar Type TV Tuner, VHF Oscillator ApplicationsApplications Unit: mm Maximum Ratings (Ta 25°C)Characteristics Symbol Rating Unit Collector ..
2SC3125 ,Transistor Silicon NPN Epitaxial Planar Type TV Final Picture IF Amplifier ApplicationsApplications Unit: mm Good linearity of f T Maximum Ratings (Ta 25°C)Characteristics Sym ..
2SC3127 , isc Silicon NPN RF Transistor
2SC3127ID-TL-E , Silicon NPN Epitaxial
2SC3128 , Silicon NPN Epitaxial
2SC3128 , Silicon NPN Epitaxial
2N6762
N-Channel Power MOSFETs/ 4.5A/ 450V/500V
PD - 90336F
International
IEZR Rectifier IRF430
REPETITIVE AVALANCHEAND dv/dt RATED J AN TX2N67 62
HEXFET®TRANSISTORS JANTXV2N6762
THRU-HOLE (TO-204AA/AE) TlRElF:MlrlL-lPlRF-19500/542l
500V, N-CHANNEL
Product Summary
Part Number anss RDS(on) In
IRF430 500V 1.5 f2 4.5A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State ofthe Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re- TO-3
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control, Features:
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
" Repetitive Avalanche Ratings
l: Dynamic dv/dt Rating
They are well suited for applications such as switching u Hermetically Sealed
power supplies, motor controls, inverters, choppers, audio a Simple Drive Requirements
amplifiers and high energy pulse circuits. u Ease ofParalleling
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 4.5
1D @ VGS = 10V, TC = 100°C Continuous Drain Current 3.0 A
IDM Pulsed Drain Current C) 18
PD @ TC = 25°C Max. Power Dissipation 75 W
Linear Derating Factor 0.6 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 1.1 mJ
IAR Avalanche Current Cf) 4.5 A
EAR Repetitive Avalanche Energy co - mJ
dv/dt Peak Diode Recovery dv/dt © 3.5 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for los)
Weight 11.5 (typical) g
For footnotes refer to the last page
1
01/22/01
IRF430 International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 500 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - 0.78 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 1.50 n VGS = 10V, ID =3.0A©
Resistance - - 1.80 VGS =10V, ID =4.5A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID =250pA
gfs Forward Transconductance 2.7 - - S (U) VDS > 15V, IDS =3.0A©
IDSS Zero Gate Voltage Drain Current - - 25 VDs=400V,VGs=0V
- - 250 HA VDS =400v
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward - - 100 nA VGS =20V
IGSS Gate-to-Source Leakage Reverse - - -100 VGS =-20V
Qg Total Gate Charge 16 - 40 VGS =10V, ID=4.5A
Qgs Gate-to-Source Charge 2.0 - 6.0 nC VDS =250V
Qgd Gate-to-Drain ('Miller') Charge 8.0 - 20
td(on) Turn-On Delay Time - - 30 VDD =250V, ID =4.5A,
tr Rise Time - - 40 RG =7.5f2
tti(om Turn-Off Delay Time - - 80 ns
tf Fall Time - - 30
LS + LD Total Inductance - 6.1 - nH Measured from the center of
drain pad to center of source
Ciss Input Capacitance - 610 VGS = 0V, VDS =25V
Cogs Output Capacitance - 135 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 65 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 4.5 A
ISM Pulse Source Current (Body Diode) C) - - 18
VSD Diode Forward Voltage - - 1.4 V Tj = 25°C, Is =4.5A, VGS = 0V co
trr Reverse Recovery Time - - 900 nS Tj = 25°C, IF =4.5A, di/dt SlOOA/us
QRR Reverse Recovery Charge - - 7.0 pc VDD S50V co
ton F orward Turn-On Time Intrinsic tum-on time is negligible. Turn-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case - - 1.67 'C/W
Rth] A Junction to Ambient - - 30 Typical socket mount
For footnotes refer to the last page
