2N6518 ,PNP Epitaxial Silicon Transistor2N65182N6518High Voltage Transistor• Collector-Emitter Voltage: V = -250VCEO• Collector Dissipation ..
2N6519 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2N6520 ,Leaded Small Signal Transistor General PurposeTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, R 200 °C/WJAJunction−to−A ..
2N6520RLRAG , High Voltage Transistors
2N6547 ,SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
2N6547 ,SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
2SC3077 ,Si NPN planar. UHF amplifier, mixer.Absolute Maximum Ratings (Ta = 25°C) 3Item Symbol Value Unit gar-pf-i-AWE m 30 v H31/77'15‘77‘EEH‘: ..
2SC3086 ,POWER TRANSISTORS(3A,500V,40W)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3088 ,NPN Triple Diffused Planar Silicon Transistor 500V/4A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3089 ,NPN Triple Diffused Planar Silicon Transistor 500V/7A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3098 ,Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure 2 NF = 2.5dB, |S | = 14.5dB (f = 500 MHz) 21e2 NF = ..
2SC3099 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure 2 NF = 1.7dB, |S | = 15dB (f = 500 MHz) 21e2 NF = 2 ..
2N6518
PNP Epitaxial Silicon Transistor
2N6518 2N6518 High Voltage Transistor • Collector-Emitter Voltage: V = -250V CEO • Collector Dissipation: P (max)=625mW C • Complement to 2N6515 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -250 V CBO V Collector-Emitter Voltage -250 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -500 mA C I Base Current -250 mA B P Collector Power Dissipation 625 mW C Derate above 25°C5mW/°C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG • Refer to 2N6520 for graphs Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV * Collector-Base Breakdown Voltage I = -100μA, I =0 -250 V CBO C E BV Collector-Emitter Breakdown Voltage I = -1mA, I =0 -250 V CEO C B BV Emitter-Base Breakdown Voltage I = -10μA, I =0 -5 V EBO E C I Collector Cut-off Current V = -150V, I =0 -50 nA CBO CB E I Emitter Cut-off Current V = -4V, I =0 -50 nA EBO EB C h * DC Current Gain V = -10V, I = -1mA 35 FE CE C V = -10V, I = -10mA 50 CE C V = -10V, I = -30mA 50 300 CE C V = -10V, I = -50mA 45 220 CE C V = -10V, I = -100mA 25 CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -1mA -0.30 V CE C B I = -20mA, I = -2mA -0.35 V C B I = -30mA, I = -3mA -0.50 V C B I = -50mA, I = -5mA -1 V C B V (sat) Base-Emitter Saturation Voltage I = -10mA, I = -1mA -0.75 V BE C B I = -20mA, I = -2mA -0.85 V C B I = -30mA, I = -3mA -0.90 V C B V (on) Base-Emitter On Voltage V = -10V, I = -100mA -2 V BE CE C f * Current Gain Bandwidth Product V = -20V, I = -10mA, f=20MHz 40 200 MHz T CE C C Output Capacitance V = -20V, I =0, f=1MHz 6 pF ob CB E C Emitter-Base Capacitance V = -0.5V, I =0, f=1MHz 100 pF EB EB C t Turn On Time V (off)= -2V, V = -100V 200 ns ON BE CC I = -50mA, I = -10mA C B1 t Turn Off Time V = -100V, I = -50mA 3.5 ns OFF CC C I =I =10mA B1 B2 * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% ©2002 Rev. A2, August 2002
