2N6517TA ,NPN Epitaxial Silicon Transistor2N65172N6517High Voltage Transistor• Collector-Emitter Voltage: V =350VCEO• Collector Dissipation: ..
2N6518 ,PNP Epitaxial Silicon Transistor2N65182N6518High Voltage Transistor• Collector-Emitter Voltage: V = -250VCEO• Collector Dissipation ..
2N6519 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
2N6520 ,Leaded Small Signal Transistor General PurposeTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, R 200 °C/WJAJunction−to−A ..
2N6520RLRAG , High Voltage Transistors
2N6547 ,SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
2SC3077 ,Si NPN planar. UHF amplifier, mixer.Absolute Maximum Ratings (Ta = 25°C) 3Item Symbol Value Unit gar-pf-i-AWE m 30 v H31/77'15‘77‘EEH‘: ..
2SC3086 ,POWER TRANSISTORS(3A,500V,40W)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3088 ,NPN Triple Diffused Planar Silicon Transistor 500V/4A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3089 ,NPN Triple Diffused Planar Silicon Transistor 500V/7A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3098 ,Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure 2 NF = 2.5dB, |S | = 14.5dB (f = 500 MHz) 21e2 NF = ..
2SC3099 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure 2 NF = 1.7dB, |S | = 15dB (f = 500 MHz) 21e2 NF = 2 ..
2N6517TA
NPN Epitaxial Silicon Transistor
2N6517 2N6517 High Voltage Transistor • Collector-Emitter Voltage: V =350V CEO • Collector Dissipation: P (max)=625mW C • Complement to 2N6520 • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 350 V CBO V Collector-Emitter Voltage 350 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 500 mA C P Collector Power Dissipation 625 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG • Refer to 2N6515 for graphs Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV * Collector-Emitter Breakdown Voltage I =1mA, I =0 350 V CEO C B BV Collector-Base Breakdown Voltage I =100μA, I =0 350 V CBO C E BV Emitter-Base Breakdown Voltage I =10μA, I =0 6 V EBO E C I Collector Cut-off Current V =250V, I =0 50 nA CBO CB E I Emitter Cut-off Current V =5V, I =0 50 nA EBO EB C h * DC Current Gain I =1mA, V =10V 20 FE C CE I =10mA, V =10V 30 C CE I =30mA, V =10V 30 200 C CE I =50mA, V =10V 20 200 C CE I =100mA, V =10V 15 C CE V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.3 V CE C B I =20mA, I =2mA 0.35 V C B I =30mA, I =3mA 0.5 V C B I =50mA, I =5mA 1 V C B V (sat) Base-Emitter Saturation Voltage I =10mA, I =1mA 0.75 V BE C B I =20mA, I =2mA 0.85 V C B I =30mA, I =3mA 0.9 V C B C Output Capacitance V =20V, I =0, f=1MHz 6 pF ob CB E f * Current Gain Bandwidth Product I =10mA, V =20V, 40 200 MHz T C CE f=20MHz V (on) Base Emitter On Voltage I =100mA, V =10V 2 V BE C CE * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% ©2002 Rev. A2, August 2002
