2N6497 ,HIGH VOLTAGE NPN SILICON POWER TRANSISTORS2t, TIME μ (s)2N64971.00.7D = 0.50.50.30.20.20.1P(pk)0.050.1R = 1.56 °C/WθJC(max)0.07 0.02D CURVE ..
2N6504 ,Thyristor SCR 50V 250A 3-Pin(3+Tab) TO-220AB BulkELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Uni ..
2N6504G , Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS
2N6507 ,Silicon Controlled Rectifiers22N6504 SeriesVoltage Current Characteristic of SCR+ CurrentAnode +VSymbol ParameterTMV Peak Repeti ..
2N6508 ,Silicon Controlled Rectifiersfeatures include:gate drive signal. A center–gate–fire SCR has more di/dtcapability than a corner–g ..
2N6508 ,Silicon Controlled RectifiersFeatures• Glass Passivated Junctions with Center Gate Fire for GreaterSCRsParameter Uniformity and ..
2SC3073 ,SILICON NPN EPITAXIAL TYPE(PCT PROCESS)FEATURES:. Good Linearity of hFE' Complementary to 2SA1243MAXIMUM RATINGS (ia--25oc)CHARACTERISTICC ..
2SC3074 ,Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching ApplicationsApplications Unit: mm Low collector saturation voltage: V = 0.4 V (max) (I = 3 A) CE (sat) C ..
2SC3074 ,Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 High Current Switch ..
2SC3074-Y , High Current Switching Applications
2SC3074-Y , High Current Switching Applications
2SC3075 ,Transistor Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter ApplicationsApplications DC-AC Converter
2N6497
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
High Voltage NPN Silicon
Power Transistors.. designed for high voltage inverters, switching regulators and
line–operated amplifier applications. Especially well suited for
switching power supply applications. High Collector–Emitter Sustaining V oltage –
VCEO(sus) = 250 Vdc (Min) Excellent DC Current Gain
hFE = 10–75 @ IC = 2.5 Adc Low Collector–Emitter Saturation Voltage @ IC = 2.5 Adc –
VCE(sat) = 1.0 Vdc (Max)
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(1) Indicates JEDEC Registered Data.
