2N6488. ,NPN/PNP PLASTIC POWER TRANSISTORS32N6487 2N6488 2N6490 2N6491VCC1000+ 30 V25 μs500RCt+ 10 V rSCOPE200R0B100- 10 V51 D1t, t 10 nsNP ..
2N6489 ,Conductor Products, Inc. - SILICON N-P-N AND P-N-P EPITAXIAL-BASE VERSAWATT TRANSISTORS
2N6489 ,Conductor Products, Inc. - SILICON N-P-N AND P-N-P EPITAXIAL-BASE VERSAWATT TRANSISTORS
2N6491 ,NPN/PNP PLASTIC POWER TRANSISTORSELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
2N6491 ,NPN/PNP PLASTIC POWER TRANSISTORSON SemiconductorNPNComplementary Silicon Plastic2N6487Power Transistors*2N6488. . . designed for u ..
2N6491G , 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−80 VOLTS, 75 WATTS
2SC3067 ,NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONSFeatures. Excellent in thermal equilibrium and suiteddifferential amp.. Low noise.. Matched pair ca ..
2SC3068 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3069 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3070 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3072 ,Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier ApplicationsApplications High DC current gain : h = 140 to 450 (V = 2 V, I = 0.5 A) FE CE C : h = 70 (mi ..
2SC3073 ,SILICON NPN EPITAXIAL TYPE(PCT PROCESS)FEATURES:. Good Linearity of hFE' Complementary to 2SA1243MAXIMUM RATINGS (ia--25oc)CHARACTERISTICC ..
2N6488-2N6488.-2N6491
NPN/PNP PLASTIC POWER TRANSISTORS
Complementary Silicon Plastic
Power Transistors.. designed for use in general–purpose amplifier and switching
applications. DC Current Gain Specified to 15 Amperes —
hFE = 20–150 @ IC = 5.0 Adc
= 5.0 (Min) @ IC = 15 Adc Collector–Emitter Sustaining Voltage —
VCEO(sus) = 60 Vdc (Min) – 2N6487, 2N6490
= 80 Vdc (Min) – 2N6488, 2N6491 High Current Gain — Bandwidth Product
fT = 5.0 MHz (Min) @ IC = 1.0 Adc TO–220AB Compact Package
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(1) Indicates JEDEC Registered Data.
*ON Semiconductor Preferred Device
