2N6426 ,Leaded Small Signal Transistor Darlington
2N6426 ,Leaded Small Signal Transistor Darlington
2N6426 ,Leaded Small Signal Transistor Darlington• Device Marking: Device Type, e.g., 2N6426, Date CodeCOLLECTOR 3BASE2
2N6427 ,Leaded Small Signal Transistor DarlingtonTHERMAL CHARACTERISTICSSee detailed ordering and shipping information in the packagedimensions sect ..
2N6486 ,Conductor Products, Inc. - SILICON N-P-N AND P-N-P EPITAXIAL-BASE VERSAWATT TRANSISTORS
2N6486 ,Conductor Products, Inc. - SILICON N-P-N AND P-N-P EPITAXIAL-BASE VERSAWATT TRANSISTORS
2SC3063 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3064 ,NPN Epitaxial Planar Silicon CompositeTransistorAbsolute Maximum Ratings at Ta=25°C _ unitCollector to Base Voltage Ircrso 55 IrCellector to Emitte ..
2SC3067 ,NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONSFeatures. Excellent in thermal equilibrium and suiteddifferential amp.. Low noise.. Matched pair ca ..
2SC3068 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3069 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3070 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2N6426-2N6427
Small Signal Darlington NPN
2N6426*, 2N6427
Preferred Device Darlington Transistors
NPN Silicon
Features Pb−Free Packages are Available** Device Marking: Device Type, e.g., 2N6426, Date Code
MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS**For additional information on our Pb−Free strategy and soldering details,
TO−92
CASE 29
STYLE 1
*Preferred devices are recommended choices for futureuse and best overall value.
MARKING
DIAGRAMSee detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
http://COLLECTOR 3
BASE
EMITTER 123
642x Specific Device Code = Year = Work Week
