2N6405 ,Silicon Controlled Rectifier 16A 800VMaximum ratings applied to the device are individual stress limitvalues (not normal operating condi ..
2N6405 ,Silicon Controlled Rectifier 16A 800V2N6400 SeriesPreferred DeviceSilicon Controlled RectifiersReverse Blocking ThyristorsDesigned prima ..
2N6426 ,Leaded Small Signal Transistor Darlington
2N6426 ,Leaded Small Signal Transistor Darlington
2N6426 ,Leaded Small Signal Transistor Darlington• Device Marking: Device Type, e.g., 2N6426, Date CodeCOLLECTOR 3BASE2
2N6427 ,Leaded Small Signal Transistor DarlingtonTHERMAL CHARACTERISTICSSee detailed ordering and shipping information in the packagedimensions sect ..
2SC3063 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3064 ,NPN Epitaxial Planar Silicon CompositeTransistorAbsolute Maximum Ratings at Ta=25°C _ unitCollector to Base Voltage Ircrso 55 IrCellector to Emitte ..
2SC3067 ,NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONSFeatures. Excellent in thermal equilibrium and suiteddifferential amp.. Low noise.. Matched pair ca ..
2SC3068 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3069 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3070 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2N6402-2N6403-2N6404-2N6405
Silicon Controlled Rectifier 16A 600V
2N6400 Series
Preferred DeviceSilicon Controlled Rectifiers
Reverse Blocking ThyristorsDesigned primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half−wave silicon gate−controlled, solid−state devices are needed.
Features Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 Volts Pb−Free Packages are Available*
