2N6397 ,12A silicon controlled rectifier. Vrsom 450V.ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Uni ..
2N6397 ,12A silicon controlled rectifier. Vrsom 450V.**Order this documentSEMICONDUCTOR TECHNICAL DATAby 2N6394/D** ** ** *Reverse Blocking Triode Thyri ..
2N6399 ,SCRs 12 AMPERES RMS 50 thru 800 VOLTSMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value Unit(1)Peak Repetitive Forwa ..
2N6402 ,16A silicon controlled rectifier. Vrsom 250V.3T , MAXIMUM CASE TEMPERATURE ( C) °CP , AVERAGE POWER (WATTS)(AV)2N6400 Series200100705030 ..
2N6403 ,16A silicon controlled rectifier. Vrsom 450V.ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Uni ..
2N6404 ,Silicon Controlled Rectifier 16A 600VMAXIMUM RATINGS* (T = 25°C unless otherwise noted)JRating Symbol Value UnitPeak Repetitive Off−Stat ..
2SC3063 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3064 ,NPN Epitaxial Planar Silicon CompositeTransistorAbsolute Maximum Ratings at Ta=25°C _ unitCollector to Base Voltage Ircrso 55 IrCellector to Emitte ..
2SC3067 ,NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONSFeatures. Excellent in thermal equilibrium and suiteddifferential amp.. Low noise.. Matched pair ca ..
2SC3068 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3069 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3070 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2N6397
Silicon Controlled Rectifiers
2N6394 Series
Preferred DeviceSilicon Controlled Rectifiers
Reverse Blocking ThyristorsDesigned primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies.
Features Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 Volts Pb−Free Packages are Available*
MAXIMUM RATINGS* (TJ = 25°C unless otherwise noted)*Indicates JEDEC Registered Data
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
