2N6395 ,12A silicon controlled rectifier. Vrsom 125V.THERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 2 °C/Wθ ..
2N6395 ,12A silicon controlled rectifier. Vrsom 125V.**Order this documentSEMICONDUCTOR TECHNICAL DATAby 2N6394/D** ** ** *Reverse Blocking Triode Thyri ..
2N6397 ,12A silicon controlled rectifier. Vrsom 450V.ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Uni ..
2N6397 ,12A silicon controlled rectifier. Vrsom 450V.**Order this documentSEMICONDUCTOR TECHNICAL DATAby 2N6394/D** ** ** *Reverse Blocking Triode Thyri ..
2N6399 ,SCRs 12 AMPERES RMS 50 thru 800 VOLTSMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value Unit(1)Peak Repetitive Forwa ..
2N6402 ,16A silicon controlled rectifier. Vrsom 250V.3T , MAXIMUM CASE TEMPERATURE ( C) °CP , AVERAGE POWER (WATTS)(AV)2N6400 Series200100705030 ..
2SC3063 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3064 ,NPN Epitaxial Planar Silicon CompositeTransistorAbsolute Maximum Ratings at Ta=25°C _ unitCollector to Base Voltage Ircrso 55 IrCellector to Emitte ..
2SC3067 ,NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONSFeatures. Excellent in thermal equilibrium and suiteddifferential amp.. Low noise.. Matched pair ca ..
2SC3068 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3069 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3070 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2N6394-2N6395-2N6397-2N6399
SCRs 12 AMPERES RMS 50 thru 800 VOLTS
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Reverse Blocking Triode Thyristors. . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies. Glass Passivated Junctions with Center Gate Geometry for Greater Parameter
Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High
Heat Dissipation and Durability Blocking Voltage to 800 Volts
*MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
THERMAL CHARACTERISTICS*Indicates JEDEC Registered Data. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Order this document
by 2N6394/D-
SEMICONDUCTOR TECHNICAL DATA
