2N6388 ,DARLINGTON SILICON POWER TRANSISTORSELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
2N6388 ,DARLINGTON SILICON POWER TRANSISTORS32N6387 2N63887.0VCC5.0R AND R VARIED TO OBTAIN DESIRED CURRENT LEVELSB C + 30 V3.0D MUST BE FAST R ..
2N6388 ,DARLINGTON SILICON POWER TRANSISTORS
2N6388 ,DARLINGTON SILICON POWER TRANSISTORS
2N6388. ,DARLINGTON SILICON POWER TRANSISTORSMAXIMUM RATINGS PIN 1. BASEÎÎ2. COLLECTOR3. EMITTERRating Symbol 2N6387 2N6388 Unit1 4. COLLECTOR2C ..
2N6388. ,DARLINGTON SILICON POWER TRANSISTORSON Semiconductor2N6387Plastic Medium-Power*2N6388Silicon Transistors*ON Semiconductor Preferred De ..
2SC3063 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3064 ,NPN Epitaxial Planar Silicon CompositeTransistorAbsolute Maximum Ratings at Ta=25°C _ unitCollector to Base Voltage Ircrso 55 IrCellector to Emitte ..
2SC3067 ,NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONSFeatures. Excellent in thermal equilibrium and suiteddifferential amp.. Low noise.. Matched pair ca ..
2SC3068 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3069 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3070 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2N6388-2N6388.
DARLINGTON SILICON POWER TRANSISTORS
Plastic Medium-Power
Silicon T ransistors.. designed for general–purpose amplifier and low–speed
switching applications. High DC Current Gain —
hFE = 2500 (Typ) @ IC
= 4.0 Adc Collector–Emitter Sustaining Voltage – @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) — 2N6387
= 80 Vdc (Min) — 2N6388 Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC
= 5.0 Adc — 2N6387, 2N6388 Monolithic Construction with Built–In Base–Emitter Shunt Resistors TO–220AB Compact Package
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*ON Semiconductor Preferred Device
