2N6346 ,TRIACS Silicon Bidirectional Triode Thyristors**Order this documentSEMICONDUCTOR TECHNICAL DATA by 2N6342/D *Silicon Bidirectional Triode Thyrist ..
2N6348 ,TRIACS Silicon Bidirectional Triode ThyristorsMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value Unit(1)*Peak Repetitive Off- ..
2N6349 ,TRIACS Silicon Bidirectional Triode ThyristorsTHERMAL CHARACTERISTICSCharacteristic Symbol Max Unit*Thermal Resistance, Junction to Case R 2.2 °C ..
2N6349 ,TRIACS Silicon Bidirectional Triode ThyristorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)C ..
2N6386 ,Conductor Products, Inc. - PLASTIC MEDIUM-POWER SILICON TRANSISTORS
2N6387 ,DARLINGTON SILICON POWER TRANSISTORSOrder this document**by 2N6387/DSEMICONDUCTOR TECHNICAL DATA* ** Motorola Preferred Device. . . de ..
2SC3063 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3064 ,NPN Epitaxial Planar Silicon CompositeTransistorAbsolute Maximum Ratings at Ta=25°C _ unitCollector to Base Voltage Ircrso 55 IrCellector to Emitte ..
2SC3067 ,NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONSFeatures. Excellent in thermal equilibrium and suiteddifferential amp.. Low noise.. Matched pair ca ..
2SC3068 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3069 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3070 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2N6346-2N6348-2N6349
TRIACS Silicon Bidirectional Triode Thyristors
Silicon Bidirectional Triode Thyristors. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering. Blocking Voltage to 800 Volts All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability Gate Triggering Guaranteed in Two Modes (2N6342, 2N6343, 2N6344, 2N6345)
or Four Modes (2N6346, 2N6347, 2N6348, 2N6349) For 400 Hz Operation, Consult Factory 12 Ampere Devices Available as 2N6342A thru 2N6349A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
