2N6316 ,COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS
2N6317 ,COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS
2N6318 ,COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS
2N6318 ,COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS
2N6344 ,TRIACS Silicon Bidirectional Triode ThyristorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)C ..
2N6344G , Triacs Silicon Bidirectional Thyristors
2SC3063 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3064 ,NPN Epitaxial Planar Silicon CompositeTransistorAbsolute Maximum Ratings at Ta=25°C _ unitCollector to Base Voltage Ircrso 55 IrCellector to Emitte ..
2SC3067 ,NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONSFeatures. Excellent in thermal equilibrium and suiteddifferential amp.. Low noise.. Matched pair ca ..
2SC3068 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3069 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3070 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2N6316-2N6317-2N6318
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS
