2N6284 ,DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORSELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
2N6286 ,DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS3r(t), EFFECTIVE TRANSIENTTHERMAL RESISTANCE (NORMALIZED)t, TIME μ (s)2N6283 2N6284 2N6286 2N6287 ..
2N6287 ,DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS
2N6292 ,EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORSTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitÎÎÎThermal Resistance, Junction to Case R 3.12 ..
2N6295 ,Conductor Products, Inc. - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
2N6297 ,Conductor Products, Inc. - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
2SC3063 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3064 ,NPN Epitaxial Planar Silicon CompositeTransistorAbsolute Maximum Ratings at Ta=25°C _ unitCollector to Base Voltage Ircrso 55 IrCellector to Emitte ..
2SC3067 ,NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONSFeatures. Excellent in thermal equilibrium and suiteddifferential amp.. Low noise.. Matched pair ca ..
2SC3068 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3069 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3070 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2N6284-2N6286
DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS
Darlington Complementary
Silicon Power T ransistors.. designed for general–purpose amplifier and low–frequency
switching applications. High DC Current Gain @ IC = 10 Adc –
hFE = 2400 (Typ) – 2N6284
= 4000 (Typ) – 2N6287 Collector–Emitter Sustaining Voltage –
VCEO(sus) = 100 Vdc (Min) Monolithic Construction with Built–In Base–Emitter Shunt
Resistors
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*Indicates JEDEC Registered Data. 50 100 125 200
TC, CASE TEMPERATURE ( °C)
, POWER DISSIP
TION (W
TTS)
140 75 1500
175
