Home ›  2 › 25 > 2N6277,NPN Transistor

2N6277 Fast Delivery,Good Price
Part Number:

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
2N6277	MOT	N/a	210	avai	NPN Transistor

2N6277 ,NPN TransistorMAXIMUM RATINGS(1)(TO–3)Rating Symbol 2N6274 2N6275 2N6277 UnitCollector–Base Voltage V 120 140 180 ..
2N6282 ,DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORSTHERMAL CHARACTERISTICS(TO–3)ÎÎÎÎÎCharacteristic Symbol Max UnitÎÎÎThermal Resistance, Junction to ..
2N6284 ,DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORSELECTRICAL CHARACTERISTICS (T = 25
C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
2N6286 ,DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS3r(t), EFFECTIVE TRANSIENTTHERMAL RESISTANCE (NORMALIZED)t, TIME μ (s)2N6283 2N6284 2N6286 2N6287 ..
2N6287 ,DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS
2N6292 ,EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORSTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitÎÎÎThermal Resistance, Junction to Case R 3.12 ..
2SC3052 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3052 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3052 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3063 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3064 ,NPN Epitaxial Planar Silicon CompositeTransistorAbsolute Maximum Ratings at Ta=25°C _ unitCollector to Base Voltage Ircrso 55 IrCellector to Emitte ..
2SC3067 ,NPN Epitaxial Planar Silicon Transistor DIFFERENTIAL AMP APPLICATIONSFeatures. Excellent in thermal equilibrium and suiteddifferential amp.. Low noise.. Matched pair ca ..

---

2N6277
POWER TRANSISTORS NPN SILICON
-.. designed for use in industrial–military power amplifer and switching circuitapplications. High Collector Emitter Sustaining —
VCEO(sus) = 100 Vdc (Min) — 2N6274
VCEO(sus) = 120 Vdc (Min) — 2N6275
VCEO(sus) = 150 Vdc (Min) — 2N6277 High DC Current Gain —
hFE = 30–120 @ IC = 20 Adc
hFE = 10 (Min) @ IC = 50 Adc Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc Fast Switching Times @ IC 20 Adc
tr = 0.35 μs (Max)
ts = 0.8 μs (Max)
tf = 0.25 μs (Max) Complement to 2N6377–79
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
(1) Indicates JEDEC Registered Data. 25 75 200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
10050 125 150 175
, POWER DISSIP
TION (W
TTS)
*Motorola Preferred Device

TEL:86-533-2716050      FAX:86-533-2716790     ©2020 IC PHOENIX CO.,LIMITED