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2N6111STN/a1858avaiEPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
2N6111. |2N6111STN/a250avaiEPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS


2N6111 ,EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORSON SemiconductorPNP2N6107Complementary Silicon PlasticPower Transistors*2N6109. . . designed for u ..
2N6111 ,EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS2N61072N6111®SILICON PNP SWITCHING TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPE ■ PNP TRANSIS ..
2N6111. ,EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORSAPPLICATIONS: ■ LINEAR AND SWITCHING INDUSTRIALEQ ..
2N6122 ,Conductor Products, Inc. - 40 WATT NPN SILICON POWER
2N6125 , COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS
2N6232 , COLLECTOR CURRENT = 10 AMPS NPN TYPES
2SC3030 ,TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE HIGH SPEED SWITCHINGApplications ox4vr>rtAsxI.-' Switching regulators .ttis%'A%eitet Ultrasonic generators . 1U5 ..
2SC3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3042 ,NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3052 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3052 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3052 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE


2N6111-2N6111.
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
2N6107
2N6111

SILICON PNP SWITCHING TRANSISTORS STMicroelectronics PREFERRED
SALESTYPE PNP TRANSISTORS

APPLICATIONS:
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION

The 2N6107 and 2N6111 are epitaxial-base PNP
silicon transistors in Jedec TO-220 plastic
package. They are intended for a wide variety of
medium power switching and linear applications.
February 2001
ABSOLUTE MAXIMUM RATINGS

For PNP devices voltage and current values are negative
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
For PNP types voltage and current values are negative.
For characteristic curves see the bd534 (PNP) series.
2N6107/2N6111

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2N6107/2N6111
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. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
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