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2N6107ONN/a77avaiEPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
2N6111ONN/a73000avaiEPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
2N6292RCAN/a8avaiEPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS


2N6111 ,EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORSON SemiconductorPNP2N6107Complementary Silicon PlasticPower Transistors*2N6109. . . designed for u ..
2N6111 ,EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS2N61072N6111®SILICON PNP SWITCHING TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPE ■ PNP TRANSIS ..
2N6111. ,EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORSAPPLICATIONS: ■ LINEAR AND SWITCHING INDUSTRIALEQ ..
2N6122 ,Conductor Products, Inc. - 40 WATT NPN SILICON POWER
2N6125 , COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS
2N6232 , COLLECTOR CURRENT = 10 AMPS NPN TYPES
2SC3030 ,TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE HIGH SPEED SWITCHINGApplications ox4vr>rtAsxI.-' Switching regulators .ttis%'A%eitet Ultrasonic generators . 1U5 ..
2SC3039 ,POWER TRANSISTORS(7.0A,400V,50W)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3042 ,NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3052 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3052 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3052 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE


2N6107-2N6111-2N6292
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
Complementary Silicon Plastic
Power Transistors.. designed for use in general–purpose amplifier and switching
applications. DC Current Gain Specified to 7.0 Amperes
hFE = 30–150 @ IC
= 3.0 Adc — 2N6111, 2N6288
= 2.3 (Min) @ IC = 7.0 Adc — All Devices Collector–Emitter Sustaining Voltage —
VCEO(sus) = 30 Vdc (Min) — 2N6111, 2N6288
= 50 Vdc (Min) — 2N6109
= 70 Vdc (Min) — 2N6107, 2N6292 High Current Gain — Bandwidth Product
fT = 4.0 MHz (Min) @ IC = 500 mAdc — 2N6288, 90, 92
= 10 MHz (Min) @ IC = 500 mAdc — 2N6107, 09, 11 TO–220AB Compact Package
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*Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
*ON Semiconductor Preferred Device
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