2N6076 ,Leaded Small Signal Transistor General Purpose
2N6076 ,Leaded Small Signal Transistor General Purpose
2N6076 ,Leaded Small Signal Transistor General Purpose
2N6082 ,NPN Silicon RF Power TransistorsMAXIMUM RATINGS imam FRating Symbol Valu- Unh d COLLECTORs-coluretor-Emitter Voltage VCEO 18 VdcCol ..
2N6099 ,Conductor Products, Inc. - SILICON NPN POWER TRANSISTORS
2N60B , 600V N-Channel MOSFET
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2SC2999 ,NPN Epitaxial Planar Silicon Transistor HF Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
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2SC3001 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SC3011 ,Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications2SC3011 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 UHF~C Band Low Noise Ampli ..
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2N6076
Leaded Small Signal Transistor General Purpose
DISCRETE POWER & SIGNAL TECHNOLOGIES
2N6076
SILICON PNP SMALL SIGNAL TRANSISTOR
BVCEO . . . . 25 V (Min)
hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA
ABSOLUTE MAXIMUM RATINGS (NOTE 1)TEMPERATURESStorage Temperature -55 Degrees C to 150 Degrees C
Operating Junction Temperature 150 Degrees C
POWER DISSIPATION (NOTES 2 & 3)Total Device Dissipation at TA = 25 Deg C 625 mW
VOLTAGES & CURRENTCEO Collector to Emitter 25 VCBO Collector to Base 25 VEBO Emitter to Base 5 VC Collector Current 500 mA
2 3
0.175 - 0.185
(4.450 - 4.700)
0.500(12.70) MIN
SEATING
0.045 - 0.055
(1.143- 1.397)
0.016 - 0.021
(0.410- 0.533)
0.135 - 0.145
ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)