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2N6076CN/a597avaiLeaded Small Signal Transistor General Purpose
2N6076FSCN/a20000avaiLeaded Small Signal Transistor General Purpose
2N6076FAIRCHILDN/a10000avaiLeaded Small Signal Transistor General Purpose


2N6076 ,Leaded Small Signal Transistor General Purpose
2N6076 ,Leaded Small Signal Transistor General Purpose
2N6076 ,Leaded Small Signal Transistor General Purpose
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2N6076
Leaded Small Signal Transistor General Purpose
DISCRETE POWER & SIGNAL TECHNOLOGIES
2N6076
SILICON PNP SMALL SIGNAL TRANSISTOR
BVCEO . . . . 25 V (Min)
hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA
ABSOLUTE MAXIMUM RATINGS (NOTE 1)TEMPERATURES

Storage Temperature -55 Degrees C to 150 Degrees C
Operating Junction Temperature 150 Degrees C
POWER DISSIPATION (NOTES 2 & 3)

Total Device Dissipation at TA = 25 Deg C 625 mW
VOLTAGES & CURRENT
CEO Collector to Emitter 25 VCBO Collector to Base 25 VEBO Emitter to Base 5 VC Collector Current 500 mA 2 3
0.175 - 0.185
(4.450 - 4.700)
0.500(12.70) MIN
SEATING
0.045 - 0.055
(1.143- 1.397)
0.016 - 0.021
(0.410- 0.533)
0.135 - 0.145
ELECTRICAL CHARACTERISTICS
(25 Degrees C Ambient Temperature unless otherwise stated)
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