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Partno	Mfg	Dc	Qty	Available	Descript
2N6072	MOTO	N/a	40	avai	Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V.
2N6072A	MOTO	N/a	36	avai	Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V.
2N6072B	MOTO	N/a	56	avai	Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V.
2N6073	MOTO	N/a	18	avai	Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V.
2N6073	MOT	N/a	20	avai	Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V.
2N6073	ON	N/a	1000	avai	Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V.
2N6074	ON	N/a	1000	avai	Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V.
2N6075		N/a	25	avai	Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.
2N6075	MOTO	N/a	3	avai	Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.
2N6075	ON	N/a	1000	avai	Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.

2N6075 ,Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.MOTOROLA SC 4Hyir(yI)ES/0PT()iySensitive Gate TriacsSilicon Bidirectional Thyristors. . . designed ..
2N6075 ,Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.THERMAL CHARACTERISTICSiB52200F006l. Mounting torque in excess of 6 in, lb. does not appreciably lo ..
2N6075 ,Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.MAXIMUM RATINGS"ru-ar-tg2N6071,A,Bthru2N6075,A,BTRIACs4 AMPERES RMS200 thru 600 VOLTSMT1CASE 77-05( ..
2N6075A ,Leaded Thyristor TRIACMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value Unit(1)*Peak Repetitive Off- ..
2N6075A ,Leaded Thyristor TRIACELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)C ..
2N6075AG , Sensitive Gate Triacs Silicon Bidirectional Thyristors
2SC2996 ,Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, Local, IF High Frequency Amplifier ApplicationsApplications High stability oscillation voltage on FM local oscillator Recommend FM/AM RF, ..
2SC2999 ,NPN Epitaxial Planar Silicon Transistor HF Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3000 ,NPN Epitaxial Planar Silicon Transistor HF Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3001 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SC3011 ,Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications2SC3011 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 UHF~C Band Low Noise Ampli ..
2SC3011 ,Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier ApplicationsApplications Unit: mm 2 High gain: |S | = 12dB (typ.) 21e Low noise figure: NF = 2.3dB (typ.) ..

2N6072-2N6072A-2N6072B-2N6073-2N6074-2N6075
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V.

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