2N6073A ,Sensitive Gate TriacsMAXIMUM RATINGSRating Symbol Value Unit*Operating Junction Temperature Range T –40 to +110 °CJ*Stor ..
2N6073AG , Sensitive Gate Triacs Silicon Bidirectional Thyristors
2N6073B ,TRIACs 4 AMPERES RMS 200 thru 600 VOLTSTHERMAL CHARACTERISTICSCharacteristic Symbol Max Unit*Thermal Resistance, Junction to Case R 3.5 °C ..
2N6074 ,Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V.MOTOROLA SC 4Hyir(yI)ES/0PT()iySensitive Gate TriacsSilicon Bidirectional Thyristors. . . designed ..
2N6075 ,Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.MOTOROLA SC 4Hyir(yI)ES/0PT()iySensitive Gate TriacsSilicon Bidirectional Thyristors. . . designed ..
2N6075 ,Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.THERMAL CHARACTERISTICSiB52200F006l. Mounting torque in excess of 6 in, lb. does not appreciably lo ..
2SC2983 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier ApplicationsApplications High transition frequency: f = 100 MHz (typ.) T Complementary to 2SA1225 Maxi ..
2SC2983 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier
2SC2996 ,Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, Local, IF High Frequency Amplifier ApplicationsApplications High stability oscillation voltage on FM local oscillator Recommend FM/AM RF, ..
2SC2999 ,NPN Epitaxial Planar Silicon Transistor HF Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3000 ,NPN Epitaxial Planar Silicon Transistor HF Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3001 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2N6071-2N6071A-2N6071B-2N6073A-2N6073B-2N6075A
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS
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Silicon Bidirectional Thyristors. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering. Sensitive Gate Triggering Uniquely Compatible for Direct Coupling to TTL, HTL,
CMOS and Operational Amplifier Integrated Circuit Logic Functions Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B Blocking Voltages to 600 Volts All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)*Indicates JEDEC Registered Data. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
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by 2N6071/D-
SEMICONDUCTOR TECHNICAL DATA
