2N6058 ,DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORSTHERMAL CHARACTERISTICSCharacteristic Symbol Rating UnitÎÎÎThermal Resistance, Junction to Case R 1 ..
2N6059 ,DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORSAPPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIALEQ ..
2N6059 ,DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS2N6059®SILICON NPN POWER DARLINGTON TRANSISTOR■ STMicrolectronics PREFERREDSALESTYPE■ HIGH GAIN■ N ..
2N6059 ,DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORSOrder this document**by 2N6052/DSEMICONDUCTOR TECHNICAL DATA** ** **"* **!** *. . . designed for ..
2N6070A ,Conductor Products, Inc. - PEEK GATE TRIGGER CURRENT
2N6071 ,TRIACs 4 AMPERES RMS 200 thru 600 VOLTSTHERMAL CHARACTERISTICSCharacteristic Symbol Max Unit*Thermal Resistance, Junction to Case R 3.5 °C ..
2SC2951 , The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz.
2SC2952 , The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications.
2SC2954 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDDATA SHEETDATA SHEETSILICON TRANSISTOR2SC2954NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOL ..
2SC2954-T1 ,For amplify high frequency, low noise, and wide band.DATA SHEETDATA SHEETSILICON TRANSISTOR2SC2954NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOL ..
2SC2958 ,Silicon transistorDATA SHEETSILICON TRANSISTORS2SC2958, 2959NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY ..
2SC2959 ,Silicon transistorDATA SHEETSILICON TRANSISTORS2SC2958, 2959NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY ..
2N6058-2N6059
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS
"! .. designed for general–purpose amplifier and low frequency switching applications. High DC Current Gain —hFE = 3500 (Typ) @ IC = 5.0 Adc Collector–Emitter Sustaining Voltage — @ 100 mA
VCEO(sus) = 80 Vdc (Min) — 2N6058
VCEO(sus) = 100 Vdc (Min) — 2N6052, 2N6059 Monolithic Construction with Built–In Base–Emitter Shunt Resistors
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(1) Indicates JEDEC Registered Data.
1600 25 50 75 100 125 150 200
Figure 1. Power DeratingTC, CASE TEMPERATURE (°C)
, POWER DISSIP
TION (W
TTS) 120
Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6052/D
