2N6036 ,Leaded Power Transistor Darlington2N60362N6039®COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS■ 2N6036 IS A STMicroelectronicsPREFE ..
2N6036. ,Leaded Power Transistor Darlington2N60362N6039®COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS■ 2N6036 IS A STMicroelectronicsPREFE ..
2N6036G , Plastic Darlington Complementary Silicon Power Transistors
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2N6038 ,Leaded Power Transistor DarlingtonI 'i"3iy3iil3'? Tl0iiy33'?'? l " _:3sz51
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2N6039 ,Leaded Power Transistor Darlington2N60362N6039®COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS■ 2N6036 IS A STMicroelectronicsPREFE ..
2SC2909 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching AF 60W Predriver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC2910 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Audio 80W Output Predriver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC2911 ,NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC2923 ,Power TransistorMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SC2925 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC2944 ,TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHINGApplications _.
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2N6036-2N6036.-2N6039
Leaded Power Transistor Darlington
2N6036
2N6039COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS 2N6036 IS A STMicroelectronics
PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS GENERAL PURPOSE SWITCHING GENERAL PURPOSE AMPLIFIER
DESCRIPTION The 2N6036 and 2N6039 are complementary
silicon power Darlington transistors mounted in
Jedec SOT-32 plastic package.
December 2000
ABSOLUTE MAXIMUM RATINGS For PNP types voltage and current values are negative.
1/6
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Area Derating Curve
2N6036/2N60392/6
DC Current Gain (NPN type)
Collector Emitter Saturation Voltage (NPN type)
Base Emitter Saturation Voltage (NPN type)
DC Current Gain (PNP type)
Collector Emitter Saturation Voltage (PNP type)
Base Emitter Saturation Voltage (PNP type)
2N6036/2N60393/6
Base-Emitter On Voltage (NPN type)
Freewheel Diode Forward Voltage (NPN type)
Base-Emitter On Voltage (PNP type)
Freewheel Diode Forward Voltage (PNP type)
2N6036/2N60394/6
2N6036/2N60395/6
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
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2N6036/2N60396/6
