2N6037 ,Leaded Power Transistor DarlingtonI 'i"3iy3iil3'? Tl0iiy33'?'? l " _:3sz51
2N6034/35/36
r " " OM O
, o'i'i!ii'llil'llS1lllliifll ..
2N6038 ,Leaded Power Transistor DarlingtonI 'i"3iy3iil3'? Tl0iiy33'?'? l " _:3sz51
2N6034/35/36
r " " OM O
, o'i'i!ii'llil'llS1lllliifll ..
2N6039 ,Leaded Power Transistor Darlington2N60362N6039®COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS■ 2N6036 IS A STMicroelectronicsPREFE ..
2N6039G , Plastic Darlington Complementary Silicon Power Transistors
2N6040 ,DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
2N6040. ,DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
2SC2910 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Audio 80W Output Predriver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC2911 ,NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC2923 ,Power TransistorMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SC2925 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC2944 ,TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHINGApplications _.
sses""sos © "54”?»
. h5-5ie, aWrreta'tlt'M Colour & B/W TV power supply "?of‘ gig ..
2SC2946 ,NPN SILICON EPITAXIAL TRANSISTOR MP-3applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)
Base
Collector
Emitter
Collector
..
2N6034-2N6037-2N6038
Leaded Power Transistor Darlington
© 'i"li'3ii!3' til0iiy33'' l © 1733,20}
2N6034/35/36
2N6037/38/39
SGSMrM(0lNS(())R]
lieihl(C)RC(5)EllaE(Cn'RlC(je(C)S
6 S-THOMSON
MEDIUM POWER DARLINGTONS
DESCRIPTION
The 2N6037,
2N6038 and 2N6039 are silicon epi-
taxial-base NPN power transistors in monolithic
Darlington configuration and are mounted in Jedec
TO-126 plastic package.
The complementary PNP types are the 2N6034,
2N6035 and 2N6036 respectively.
INTERNAL SCHEMATIC DIAGRAMS
r- --_._-_.-. if“ .-t---.-- '""''"-T
a I 3 I I
I I It i
I I ' .
I n I m n I
L. _-..-----.-. l __.-----. c,-,,,-] - I __J
NPN s-Ionn PNP
ABSOLUTE MAXIMUM RATINGS
PNP 2N6034 2N6035 2N6036 .
Symbol Parameter NPN 2N6037 2N6038 2N6039 Unit
Vceo Collector-base Voltage (IE = 0) 40 60 80 V
Vceo Colletor-emitter Voltage (IB = 0) 4O 60 80 V
V530 Emitter-base Voltage (k; = 0) 5 V
lc Collector Current 4 A
ICM Collector Peak Current 8 A
la Base Current 100 mA
Ptot Total Power Dlssipation at Tease s 25°C 40 W
Tsig Storage Temperature - 65 to 150 (
Tl Junction Temperature 150 "C
January 1989
2N6034/35/37-2N6037/38/39
III 'i"liilcliilT Cl0i%l'8 3 III
THERMAL DATA , G, S - T HQMSON 305 D,
Rm Haw Thermal Resistance Junction-case Max 3.12 °G/W
Rm ramtr Thermal Resistance Junction-ambient Max 83.3 °C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified) . T-33-29 '
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Iorso Collector Cuttoff Current for 2N6034/37 VcE = 40V 100 p.A
- (ls = 0) for 2N6035I38 Voss = 60V 100 PA
for 2N6036l39 VCE = 80V 100 PA
logo Collector Cutoff Current for 2N6034/37 VCE = 40V 100 uA
(IB = 0) for 2N6035l38 l/ce = 60V 100 pA
for 2N6036l39 l/ce = 80V 100 LIA
lch Collector Cutoff Current for 2N6034l37 ch = 40V 0.1 mA
(Veg = 1,5V) for 2N6035l38 Vce =60V 0.1 mA
- for 2N6036l39 VCE =80V 0.1 mA
- Tcase = 125°C
for 2N6034/37 VCE = 40V 0.5 mA
for 2N6035/38 VCE = 60V 0.5 mA
for 2N6036l39 ch = 80V 0.5 mA
IEBO Emitter Cutoff Current VEB = 5V 2 mA
(Ic = 0)
Vcemsus)’ Collector-emitter Sustaining lc =100mA for 2N6034I37 40 V
Voitage(ls =0) for2N6035/38 60 V
for 2N6036l39 80 V
- Vcemn" Collector-emitter Saturation lc = 2A Ia = 8mA 2 V
Voltage lc = 4A IB = 40mA 3 V
Vaasa‘f Base-emitter Saturation lc = 4A IQ = 40mA 4 V
Voltage
VBE* Base-emitter Voltage IC = 2A Vcr: = 3V 2.8 V
hFE* DC Current Gain Ic =0.5A I/ce = 3V 500
Ic = 2A ch = 3V 750 15000
Ic =4A VCE =3V 100
hfe Small Signal Current Gain Io = 0.75A VCE =10V 25
f = IMHz
cho Collector-base Capacitance ch =10V IE = 0 (°)100
f = IMHz
(o) for PNP types 200pF.
Pulsed : pulse duration = 300ps, duty cycle 5 1.5%.
t SGS-THOMSON
Y' ks.'.'':",:-;'!),.',)'''.'':.)'.";.''}:',"
