2N5962 ,NPN General Purpose Amplifier2N5962/ MMBT5962Discrete POWER & SignalTechnologies2N5962 MMBT5962CETO-92CBBSOT-23EMark: 117NPN Gen ..
2N5962 ,NPN General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
2N6027 ,Leaded Thyristor PUTMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit12*Power Dissipation P 30 ..
2N6027G , Programmable Unijunction Transistor
2N6028 ,Leaded Thyristor UJTTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 75 °C/W ..
2N6028RLRA ,Programmable UJT22N6027, 2N6028I+VAB VR1 R2 AI R =A GAR1 + R2R2G +–VR1 PV– V = V SS BR1 + R2R V = V – VG T P SVVAKR ..
2SC2884 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSApplications Unit: mm High DC current gain: h = 100 to 320 FE Suitable for output stage of ..
2SC2884 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2884 Audio Frequency Amp ..
2SC2885 ,Silicon transistorDATA SHEETSILICON TRANSISTORS2SC2885, 2946, 2946(1)NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-V ..
2SC2901 ,NPN SILICON TRANSISTORFEATURES 0 High Frequency Current Gain.
0 High Speed Switching.
. Small Output Capacitance.
AB ..
2SC2904 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SC2909 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching AF 60W Predriver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2N5962
NPN General Purpose Amplifier
2N5962/ MMBT5962 Discrete POWER & Signal Technologies 2N5962 MMBT5962 C E TO-92 C B B SOT-23 E Mark: 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 45 V CEO VCBO Collector-Base Voltage 45 V V Emitter-Base Voltage 8.0 V EBO I Collector Current - Continuous 100 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5962 *MMBT5962 P Total Device Dissipation 625 350 mW D Derate above 25°C 5.0 2.8 mW/°C Thermal Resistance, Junction to Case 83.3 °C/W Rθ JC R Thermal Resistance, Junction to Ambient 200 357 °C/W θJA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997
