2N5952 ,Leaded JFET General Purpose
2N5953 ,SFET RF/VHF/ UHF/ Amplitiers
2N5953 ,SFET RF/VHF/ UHF/ Amplitiers
2N5961 ,Leaded Small Signal Transistor General Purpose
2N5961 ,Leaded Small Signal Transistor General Purpose
2N5962 ,NPN General Purpose Amplifier2N5962/ MMBT5962Discrete POWER & SignalTechnologies2N5962 MMBT5962CETO-92CBBSOT-23EMark: 117NPN Gen ..
2SC2883 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSApplications Unit: mm Suitable for output stage of 3 watts amplifier Small flat package ..
2SC2884 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSApplications Unit: mm High DC current gain: h = 100 to 320 FE Suitable for output stage of ..
2SC2884 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2884 Audio Frequency Amp ..
2SC2885 ,Silicon transistorDATA SHEETSILICON TRANSISTORS2SC2885, 2946, 2946(1)NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-V ..
2SC2901 ,NPN SILICON TRANSISTORFEATURES 0 High Frequency Current Gain.
0 High Speed Switching.
. Small Output Capacitance.
AB ..
2SC2904 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2N5952
Leaded JFET General Purpose
2N5952 2N5952 N-Channel RF Ampifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings * T =25°C unless otherwise noted C Symbol Parameter Value Units V Drain-Gate Voltage 30 V DG V Gate-Source Voltage -30 V GS I Forward Gate Current 10 mA GF T , T Operating and Storage Junction Temperature Range -55 ~ +150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Gate-Source Breakdown Voltage V = 0, I = -1.0μA-30 V (BR)GSS DS G I Gate Reverse Current V = -15V, V = 0 -1.0 nA GSS GS DS V Gate-Source Cutoff Voltage V = 15V, I = 100nA -1.3 -3.5 V GS(off) DS D On Characteristics I Zero-Gate Voltage Drain Current * V = 15V, V = 0 4.0 8.0 mA DSS DS GS Small Signal Characteristics g Forward Transfer Conductance V = 15V, V = 0, f = 1.0kHz 2000 6500 μmhos fs DS GS g Output Conductance V = 15V, V = 0, f = 100MHz 75 μmhos os DS GS C Input Capacitance V = 15V, V = 0, f = 1.0MHz 6.0 pF iss DS GS C Reverse Transfer Capacitance V = 15V, V = 0, f = 1.0MHz 2.0 pF rss DS GS NF Noise Figure V = 15V, R = 1.0kΩ, 2.0 dB DS G f = 1.0kHz * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 1.0% Thermal Characteristics T =25°C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 350 mW D Derate above 25°C 2.8 mW/°C R Thermal Resistance, Junction to Case 125 °C/W θJC R Thermal Resistance, Junction to Ambient 357 °C/W θJA ©2002 Rev. A, June 2002
