2N5911 ,Dual N-Channel JFET High Frequency AmplifierFEATURES
. Tight Tracking
. Low Insertion Loss
. Good Matchlng
PIN CONFIGURATION
To-ss ..
2N5911 ,Dual N-Channel JFET High Frequency AmplifierS-04031—Rev. D, 04-Jun-018-12N5911/5912Vishay Siliconix ..
2N5912 ,Dual N-Channel JFET High Frequency AmplifierS-04031—Rev. D, 04-Jun-018-3I – Drain Current (mA) I – Drain Current (mA) I – Saturation Drain Curr ..
2N5912 ,Dual N-Channel JFET High Frequency AmplifierELECTRICAL CHARACTERISTICS (T A Tar. 25''C unless otherwise specified)
Parameter
Gate Reverse ..
2N5912 ,Dual N-Channel JFET High Frequency AmplifierS-04031—Rev. D, 04-Jun-018-2g – Forward Transconductance (mS)fs2N5911/5912Vishay Siliconix ..
2N5943 ,Conductor Products, Inc. - NPN SILICON HIGH-FREQUENCY
2SC2882 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier ApplicationsApplications Suitable for driver of 30 to 35 watts audio amplifier Small flat package P ..
2SC2883 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSApplications Unit: mm Suitable for output stage of 3 watts amplifier Small flat package ..
2SC2884 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSApplications Unit: mm High DC current gain: h = 100 to 320 FE Suitable for output stage of ..
2SC2884 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2884 Audio Frequency Amp ..
2SC2885 ,Silicon transistorDATA SHEETSILICON TRANSISTORS2SC2885, 2946, 2946(1)NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-V ..
2SC2901 ,NPN SILICON TRANSISTORFEATURES 0 High Frequency Current Gain.
0 High Speed Switching.
. Small Output Capacitance.
AB ..
2N5911-2N5912
Dual N-Channel JFET High Frequency Amplifier
VISHAY
2N5911I5912
Vishay Siliconix
Matched N-Channel JFET Pairs
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)G$S Min (V) gfs Min (mS) ls Typ (PA) MGS, -VGszl Max (mV)
2N5911 -1 to -5 -25 5 -1 IO
2N5912 -1 to -5 -25 5 -1 15
FEATURES BENEFITS APPLICATIONS
o Two-Chip Design q Minimum Parasitics Ensuring Maximum q Wideband Differential Amps
q High Slew Rate High-Frequency Performance 0 High-Speed, Temp-Compensated,
. Low Offset/Drift Voltage q Improved Op Amp Speed, Settling Time Accuracy Single-Ended Input Amps
0 Low Gate Leakage: 1 pA q Minimum Input Error/Trimming Requirement q High Speed Comparators
. Low Noise q Insignificant Signal Loss/Error Voltage q Impedance Converters
. High CMRR: 85 dB q High System Sensitivity
q Minimum Error with Large Input Signal
DESCRIPTION
The 2N5911I5912 are matched pairs of JFETs mounted in a
TO-78 package. This two-chip design reduces parasitics and
gives better performance at high frequencies while ensuring
extremely tight matching.
The hermetically-sealed TO-78 package is available with full
military screening per MIL-S-19500 (see Military Information).
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage ............................... -25 V
Gate-Gate Voltage ............................................ ck 80 V
Gate Current ................................................. 50 mA
Lead Temperature (1/15” from case for 10 sec.) ................... 300°C
Storage Temperature _.................................. -65 to 200°C
Operating Junction Temperature .......................... -55 to 150°C
For applications information see AN102.
For similar products see the SO-8 packaged
SST440/SST441, the TO-71 packaged U440/U441, the
low-noise SST/U401 series, and the low-leakage U421/423
data sheets.
Per Sidea ........................ 367 mW
Totalb ........................... 500 mW
Power Dissipation :
a. Derate 3 mW/°C above 25''C
b. Derate 4 mW/aC above 25°C
Document Number: 70255
S-04031-Rev. D, 04-Jun-01
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2N5911/5912
VISHAY
Vishay Siliconix
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Limits
2N5911 2N5912
Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Static
Gate-Source - -
Breakdown Voltage V(BR)GSS IG - -1 WA, VDS - 0 V -35 -25 -25 V
Gate-Source Cutoff Voltage VGson VDs = 10 V, ID = 1 nA -3.5 -1 -5 -1 -5
Saturation Drain Currentb IDSS VDS = 10 V, VGS = 0 V 15 7 40 7 40 mA
VCs = -15 V, vDS = o v -1 -100 -100 pA
Gate Reverse Current less
I TA = 150°C -2 -250 -250 nA
VDG = 10 V, ID = 5 mA -1 -100 -100 pA
Gate Operating Current G I TA = 125°C -0.3 -100 -100 nA
Gate-Source Voltage VGs VDG = 10 V, IG = 5 mA -1.5 -0.3 -4 -0.3 -4
Gate-Source - - V
Forward Voltagec VSS(F) IG - 1 mA, VDS - 0 V 0.7
Dynamic
Common-Source
Forward Transconductance gfs Vrys = 10 V, ID = 5 mA 6 5 10 5 10 ms
Common-Source f= 1 kHz
Output Conductance gos 70 100 100 ws
Common-Source
Forward Transconductance gfs VDG = 10 V, ID = 5 mA 5.8 5 10 5 10 mS
Common-Source f= 100 MHz
Output Conductance gos 90 150 150 ws
Common-Source
. Ci 3 5 5
Input Capacitance ISS VDG = 10 V, ID = 5 mA pF
Common-Source Reverse C f= 1 MHz 1 1 2 1 2
Transfer Capacitance rss . .
Equivalent Input - VDG = 10 V, ID = 5 mA ny
Noise Voltage en f= 10 kHz 4 20 20 VFTz
Noise Figure NF RG = 100 kg 0.1 1 1 dB
Matching
Differential - -
Gate-Source Voltage lVGS1 _ Veszl VDG - 10 V, ID - 5 mA 4 10 15 mV
Gate-Source Voltage - - -
Differential Change ANS-UGS:?} "mp, ==1d)fahii'/1f 15 20 40 INI't
with Temperature AT A
Saturation Drain bss, - -
Current Ratio =s, VDS - 10 V, VGS - 0 V 0.98 0.95 1 0.95 1
Transconductance Ratio (ssl Vos = yl5 b = 5 mA 0.98 0.95 1 0.95 1
gm f= 1 kHz
Differential Gate Current lla-Iss) VDG = 10 V, ID = 5 mA, TA = 125°C 0.005 20 20 nA
Common Mode - -
Rejection Ratioc CMRR VDG=5to10V,lo=5mA 85 dB
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NZF
b. Pulse test: PW 5300 us duty cycle s3%.
C. This parameter not registered with JEDEC.
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Document Number: 70255
S-04031-Rev. D, 04-Jun-01
VISHAY 2N5911/5912
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage Gate Leakage Current
50 20 100 nA
loss @ Vos = 10 V, I/ss = O V [G(on) @ ID
A 9ts@VDs=10V,VGs=0V £9
< f= 1 kHz 'l 10 nA
g TI TA = 125°C
E cg) b = 10 mA
g g: g 1 nA I
8 o. g less @ 125°C
E g -l
Cl g 2 100 pA
C Q (U
(2, a 0
a s; 0 10 pA
tn 'fs"
9 ‘v” 1 pA IGSS @ 25°C
0.1 pA
O -2 -4 -6 -8 -10 0 4 8 12 16 20
VGSM) - Gate-Source Cutoff Voltage (V) VDG - Drain-Gate Voltage (V)
Output Characteristics 30 Output Characteristics
Vss(om = -5 V VGS = 0 V
Vesum) = -2 V 0 5 V
A A -1.0 V
T: T: -1.5 V
0 0 -2.0 V
5 5 -2.5 V
a a -3.0 V
-3.5 V
0 2 4 6 8 IO 0 2 4 6 8 10
l/os - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V)
Output Characteristics Output Characteristics
VGS(off) = -2 V VGS = O V Vssom = -5 V
V = 0 V
A A -0.5 V
ii. 3 l -1.0 V l
“E 'ii -1.5 v A7
0 0 -2.0 v
.E 2 E
0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1
Vos - Drain-Source Voltage (V) Ws - Drain-Source Voltage (V)
Document Number: 70255
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S-04031-Rev. D, 04-Jun-01
2N5911I5912
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Transfer Characteristics
Vss(oit) = -2 V
TA = -55'C
-0.4 Ah8
VDS=1OV
-1.2 -1.6
Vas - Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
VGS(or) = -2 V
gfs — Forward Transconductance (mS)
TA = -55'C
vDS=1ov
f=1kHz
O -0.4 -0.8 -1.2 -1.6 -2
VGS - Gate-Source Voltage (V)
Circuit Voltage Gain vs. Drain Current
"s, Veswm = -2 v
.E 's, 's
tl sUss.
g N, "s,
g Vssor) = -5 V -
f,' 's,
I 20 - sec.
i' A = gt-RL 'sts
- V 1 + RLQos csts,
10 _ AssumeVDD=15\/,VDS=5V 'N
R - M "s
- L - I
0 I I I I I I I I
0.1 1 10
ID - Drain Current (mA)
I D — Drain Current (mA)
gfs — Forward Transconductance (mS)
rDS(on) — Drain-Source On-Resistance ( (2 )
Transfer Characteristics
Vssom = -5 V
VDS=1OV
TA = -55oC
0 -1 -2 -3 -4 -5
Vas - Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
VGS(om = -5 V
2500 w.----"
0 -1 -2 -3 -4 -5
VGS - Gate-Source Voltage (V)
200 On-Resistance vs. Drain Current
1/Gs(oit) = -2 V
1 10 100
ID - Drain Current (mA)
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Document Number: 70255
S-04031-Rev. D, 04-Jun-01
VISHAY 2N5911/5912
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance Common-Source Reverse Feedback
vs. Gate-Source Voltage Capacitance vs. Gate-Source Voltage
f=1MHz f=1MHz
Ciss — Input Capacitance (pF)
Crss — Reverse Feedback Capacitance (pF)
0 -A -8 -12 -16 -20 0 -4 -8 -12 -16 -20
N/ss - Gate-Source Voltage (V) Ves - Gate-Source Voltage (V)
Input Admittance Forward Admittance
TA=25°C
vDS=1ov
|D=10mA
gig 10
fs'.". bis (il"
100 200 500 1000 100 200 500 1000
f- Frequency (MHz) f- Frequency (MHz)
Reverse Admittance Output Admittance
10 100
(IA) A
0.01 0.1
100 200 500 1000 100 200 500 1000
f- Frequency (MHz) f- Frequency (MHz)
Document Number: 70255 www.vishaycom
S-04031-Rev. D, 04-Jun-01 8-5
2N5911I5912
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
En — Noise Voltage (nV IV Hz )
rDs(on) — Drain—Source On-Resistance ( £2)
0 Equivalent Input Noise Voltage vs. Frequency
VDS=10V
10 100 1 k 10 k 100 k
f- Frequency (Hz)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
200 200
160 160
120 120
40 ros@lo=1mA,Vss=0V 40
gos@Vros=10V,Vss=0V
f= 1 kHz
0 -2 -4 -6 -8 -1 0
Vssom - Gate-Source Cutoff Voltage (V)
(311) aouemnpuoo 1nd1no — 906
90s — Output Conductance (HS)
gfs — Forward Transconductance (m8)
150 Output Conductance vs. Drain Current
VGsuor) = -5 V
VDS=1OV
f=1kHz
0.1 1 10
ID - Drain Current (mA)
Common-Source Forward Transconductance
vs. Drain Current
Vssuom = -5 V VDS = 10 V
f=1kHz
JI 1 10
ID - Drain Current (mA)
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Document Number: 70255
S-04031-Rev. D, 04-Jun-01
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