2N5909 ,MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIERFEATURES ABSOLUTE MAXIMUM RATINGS
g . Tight Tracklng (T A=25°C unless otherwise sptimifod)
N q Go ..
2N5909 ,MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIERFEATURES ABSOLUTE MAXIMUM RATINGS
g . Tight Tracklng (T A=25°C unless otherwise sptimifod)
N q Go ..
2N5911 ,Dual N-Channel JFET High Frequency AmplifierFEATURES
. Tight Tracking
. Low Insertion Loss
. Good Matchlng
PIN CONFIGURATION
To-ss ..
2N5911 ,Dual N-Channel JFET High Frequency AmplifierS-04031—Rev. D, 04-Jun-018-12N5911/5912Vishay Siliconix ..
2N5912 ,Dual N-Channel JFET High Frequency AmplifierS-04031—Rev. D, 04-Jun-018-3I – Drain Current (mA) I – Drain Current (mA) I – Saturation Drain Curr ..
2N5912 ,Dual N-Channel JFET High Frequency AmplifierELECTRICAL CHARACTERISTICS (T A Tar. 25''C unless otherwise specified)
Parameter
Gate Reverse ..
2SC2881 ,Transistor Silicon NPN Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier Applications2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier
2SC2882 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier ApplicationsApplications Suitable for driver of 30 to 35 watts audio amplifier Small flat package P ..
2SC2883 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSApplications Unit: mm Suitable for output stage of 3 watts amplifier Small flat package ..
2SC2884 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSApplications Unit: mm High DC current gain: h = 100 to 320 FE Suitable for output stage of ..
2SC2884 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2884 Audio Frequency Amp ..
2SC2885 ,Silicon transistorDATA SHEETSILICON TRANSISTORS2SC2885, 2946, 2946(1)NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-V ..
2N5908-2N5909
