2N5884 ,COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS3t, TIME μ (s)PNP 2N5883, 2N5884*, NPN 2N5885, 2N5886*1.0D = 0.50.50.20.20.1P(pk) (t) = r(t) J ..
2N5884 ,COMPLEMENTARY SILICON HIGH-POWER TRANSISTORSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Max UnitÎÎÎÎ ..
2N5886 ,COMPLEMENTARY SILICON HIGH-POWER TRANSISTORSAPPLICATIONS ■ GENERAL PURPOSE SWITCHING ANDAMP ..
2N5908 ,MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIERG E SOLID STATE " DE 3lV?5Clly1, nunnna l r
~L‘7-17
I
O
a 2NS902-2NS909 1'lliilillMEiii'it,nl ..
2N5909 ,MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIERFEATURES ABSOLUTE MAXIMUM RATINGS
g . Tight Tracklng (T A=25°C unless otherwise sptimifod)
N q Go ..
2N5909 ,MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIERFEATURES ABSOLUTE MAXIMUM RATINGS
g . Tight Tracklng (T A=25°C unless otherwise sptimifod)
N q Go ..
2SC2881 ,Transistor Silicon NPN Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier ApplicationsApplications High voltage: V = 120 V CEO High transition frequency: f = 120 MHz (typ.) T ..
2SC2881 ,Transistor Silicon NPN Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier Applications2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier
2SC2882 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier ApplicationsApplications Suitable for driver of 30 to 35 watts audio amplifier Small flat package P ..
2SC2883 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSApplications Unit: mm Suitable for output stage of 3 watts amplifier Small flat package ..
2SC2884 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONSApplications Unit: mm High DC current gain: h = 100 to 320 FE Suitable for output stage of ..
2SC2884 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2884 Audio Frequency Amp ..
2N5884
COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS
PNP 2N5883, 2N5884*,
NPN 2N5885, 2N5886*
Preferred Device Complementary Silicon
High-Power T ransistors.. designed for general–purpose power amplifier and switching
applications. Low Collector–Emitter Saturation Voltage –
VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current
ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain –
hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product –
f� = 4.0 MHz (min) at IC = 1.0 Adc
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ÎÎÎÎ Indicates JEDEC registered data. Units and conditions differ on some
parameters and re–registration reflecting these changes has been requested.
All above values most or exceed present JEDEC registered data.
