2N5830 ,Leaded Small Signal Transistor General Purpose
2N5830 ,Leaded Small Signal Transistor General Purpose
2N5830 ,Leaded Small Signal Transistor General Purpose
2N5831 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6)
SYMBOL CHA ..
2N5880 ,Conductor Products, Inc. - COMPLEMENTARY SILICON POWER TRANSISTORS
2N5884 ,COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS3t, TIME μ (s)PNP 2N5883, 2N5884*, NPN 2N5885, 2N5886*1.0D = 0.50.50.20.20.1P(pk) (t) = r(t) J ..
2SC2878 ,Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications2SC2878 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC2878 For Muting and Switching
2SC2878 ,Transistor Silicon NPN Epitaxial Type For Muting and Switching ApplicationsApplications Unit: mm High emitter-base voltage: V = 25 V (min) EBO High reverse h : Reverse ..
2SC2878A , For Muting and Switching Applications
2SC2878-A , For Muting and Switching Applications
2SC2878-A , For Muting and Switching Applications
2SC2878-B , For Muting and Switching Applications
2N5830
Leaded Small Signal Transistor General Purpose
2N5830 Discrete POWER & Signal Technologies 2N5830 TO-92 C B E NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 100 V CEO VCBO Collector-Base Voltage 120 V V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 200 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5830 P Total Device Dissipation 625 mW D 5.0 Derate above 25°C mW/°C Rθ Thermal Resistance, Junction to Case 83.3 °C/W JC Thermal Resistance, Junction to Ambient 200 °C/W RθJA 1997
