2N5772 ,NPN Switching Transistorapplications involving pulsed or low duty cycle operations
2N5772 ,NPN Switching TransistorElectrical Characteristics T =25°C unless otherwise notedaSymbol Parameter Test Condition Min. Max. ..
2N5772 ,NPN Switching Transistor2N57722N5772NPN Switching Transistor• Sourced from process 22.TO-9211. Emitter 2. Collector 3. B ..
2N5781 , Bipolar PNP Device in a Hermetically sealed TO39 Metal Package
2N5784 ,Conductor Products, Inc. - SI NPN POWER BJT
2N5810 , COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTOR
2SC2878 ,Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications2SC2878 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC2878 For Muting and Switching
2SC2878 ,Transistor Silicon NPN Epitaxial Type For Muting and Switching ApplicationsApplications Unit: mm High emitter-base voltage: V = 25 V (min) EBO High reverse h : Reverse ..
2SC2878A , For Muting and Switching Applications
2SC2878-A , For Muting and Switching Applications
2SC2878-A , For Muting and Switching Applications
2SC2878-B , For Muting and Switching Applications
2N5772
NPN Switching Transistor
2N5772 2N5772 NPN Switching Transistor • Sourced from process 22. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 15 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continued 300 mA C T Operating and Storage Junction Temperature Range - 55 ~ 150 °C STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics BV Collector-Emitter Breakdown Voltage * I = 10mA, I = 0 15 V (BR)CEO C B BV Collector-Emitter Breakdown Voltage I = 100μA, V = 0 40 V (BR)CES C BE BV Collector-Base Breakdown Voltage I = 100μA, I = 0 40 V (BR)CBO C E BV Emitter-Base Breakdown Voltage I = 100μA, I = 0 5.0 V (BR)EBO E C I Collector Cutoff Current V = 20V, I = 0 0.5 μA CBO CB E I Collector Cutoff Current V = 20V, V = 0 0.5 μA CES CE BE V = 20V, V = 0, T = 65°C 3.0 μA CE BE A I Emitter Cutoff Current V = 5.0V, I = 0 100 μA EBO EB C On Characteristics * h DC Current Gain V = 0.4V, I = 30mA 30 120 FE CE C V = 0.5V, I = 100mA 25 CE C V = 1.0V, I = 300mA 15 CE C V (sat) Collector-Emitter Saturation Voltage I = 30mA, I = 3.0mA 0.2 V CE C B I = 100mA, I = 10mA 0.28 V C B I = 300mA, I = 3.0mA 0.5 V C B V (sat) Base-Emitter Saturation Voltage I = 30mA, I = 3.0mA 0.95 V BE C B I = 100mA, I = 10mA 0.75 1.2 V C B I = 300mA, I = 3.0mA 1.7 V C B Small Signal Characteristics C Collector-Base Capacitance V = 5.0V, I = 0, f = 1MHz 5.0 pF cb CB E C Emitter-Base Capacitance V = 5.0V, I = 0, f = 1MHz 8.0 pF eb CB C h Small-Signal Current Gain I = 300mA, V = 10V, f = 100MHz 3.5 fe C CE * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% ©2002 Rev. A, August 2002
