2N5771 ,PMP SILICON SWITCHING TRANSISTORS
2N5771 ,PMP SILICON SWITCHING TRANSISTORS
2N5772 ,NPN Switching Transistorapplications involving pulsed or low duty cycle operations
2N5772 ,NPN Switching TransistorElectrical Characteristics T =25°C unless otherwise notedaSymbol Parameter Test Condition Min. Max. ..
2N5772 ,NPN Switching Transistor2N57722N5772NPN Switching Transistor• Sourced from process 22.TO-9211. Emitter 2. Collector 3. B ..
2N5781 , Bipolar PNP Device in a Hermetically sealed TO39 Metal Package
2SC2878 ,Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications2SC2878 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC2878 For Muting and Switching
2SC2878 ,Transistor Silicon NPN Epitaxial Type For Muting and Switching ApplicationsApplications Unit: mm High emitter-base voltage: V = 25 V (min) EBO High reverse h : Reverse ..
2SC2878A , For Muting and Switching Applications
2SC2878-A , For Muting and Switching Applications
2SC2878-A , For Muting and Switching Applications
2SC2878-B , For Muting and Switching Applications
2N5771
PMP SILICON SWITCHING TRANSISTORS
2N5771 / MMBT5771 2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark: 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 15 V CEO V Collector-Base Voltage 15 V CBO V Emitter-Base Voltage 4.5 V EBO I Collector Current - Continuous 200 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T ° J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5771 *MMBT5771 P Total Device Dissipation 350 225 mW D 2.8 1.8 Derate above 25°C mW/°C R Thermal Resistance, Junction to Case 125 °C/W θJC R Thermal Resistance, Junction to Ambient 357 556 °C/W θJA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997
