2N5769 ,Leaded Small Signal Transistor General Purpose
2N5769 ,Leaded Small Signal Transistor General Purpose
2N5771 ,PMP SILICON SWITCHING TRANSISTORS
2N5771 ,PMP SILICON SWITCHING TRANSISTORS
2N5772 ,NPN Switching Transistorapplications involving pulsed or low duty cycle operations
2N5772 ,NPN Switching TransistorElectrical Characteristics T =25°C unless otherwise notedaSymbol Parameter Test Condition Min. Max. ..
2SC2873-O , NPN Silicon Epitaxial Transistors
2SC2878 ,Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications2SC2878 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC2878 For Muting and Switching
2SC2878 ,Transistor Silicon NPN Epitaxial Type For Muting and Switching ApplicationsApplications Unit: mm High emitter-base voltage: V = 25 V (min) EBO High reverse h : Reverse ..
2SC2878A , For Muting and Switching Applications
2SC2878-A , For Muting and Switching Applications
2SC2878-A , For Muting and Switching Applications
2N5769
Leaded Small Signal Transistor General Purpose
2N5769 Discrete POWER & Signal Technologies 2N5769 TO-92 C B E NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 15 V CEO VCBO Collector-Base Voltage 40 V V Emitter-Base Voltage 4.5 V EBO I Collector Current - Continuous 200 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5769 P Total Device Dissipation 350 mW D 2.8 Derate above 25°C mW/°C Rθ Thermal Resistance, Junction to Case 125 °C/W JC Thermal Resistance, Junction to Ambient 357 °C/W RθJA 1997
